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Observation of Interdiffusion in ZnO/CuInSe2 Heterostructures and its Effect on Film Properties

Published online by Cambridge University Press:  21 March 2011

Ralf Hunger ,
Paul Fons ,
Kakuya Iwata ,
Akimasa Yamada ,
Koji Matsubara ,
Shigeru Niki ,
Ken Nakahara  and
Hidemi Takasu
Ralf Hunger
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Paul Fons
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Kakuya Iwata
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Akimasa Yamada
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Koji Matsubara
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Shigeru Niki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Ken Nakahara
Affiliation:
ROHM Co Ltd., Optical Device R&D Divison, Kyoto, Japan
Hidemi Takasu
Affiliation:
ROHM Co Ltd., Optical Device R&D Divison, Kyoto, Japan
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Abstract

ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H8.21
Copyright
Copyright © Materials Research Society 2001

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References

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