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Observation and Annealing of Incomplete Recrystallized Junction Defects due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

Published online by Cambridge University Press:  01 February 2011

Woo-Jin Nam ,
Kee-Chan Park ,
Sang-Hoon Jung ,
Soo-Jeong Park  and
Min-Koo Han
Woo-Jin Nam
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Soo-Jeong Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
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Abstract

Incomplete recrystallized junction defects of self-aligned, excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). TEM observation and simulation result verify that the laser irradiation intensity decreased remarkably at the junction due to diffraction of laser beam at gate electrode edge. We proposed oblique-incidence excimer laser annealing method and successfully eliminated the residual junction defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.8
Copyright
Copyright © Materials Research Society 2003

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