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Numerical Simulation of the Influence of the Gap State of a-Si:H on the Characteristics of a-Si:H p-i-n/OLED Coupling Device

Published online by Cambridge University Press:  01 February 2011

Chunya Wu ,
Yousu Chen ,
Juan Li ,
Guanghua Yang ,
Huidong Yang ,
Zhenhua Zhou ,
Ying Zhao ,
Zhiguo Meng ,
Xinhua Geng  and
Shaozheng Xiong
...Show all authors
Chunya Wu
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Yousu Chen
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Juan Li
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Guanghua Yang
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Huidong Yang
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China Inst. Of Thin Film & Nano-material, Wuyi Univ., Jiangmen, Guangdong 529020, P. R.China
Zhenhua Zhou
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Ying Zhao
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Zhiguo Meng
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Xinhua Geng
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Shaozheng Xiong
Affiliation:
Inst. of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
Lizhu Zhang
Affiliation:
Tianjin Mechanical and Electronic Vocational Technical School, Tianjin, China
Qi Wang
Affiliation:
National Renewable Energy Laboratory. 1617 Code Boulevard, Golden, Colorado 80401-3393, USA
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Abstract

The influence of the density of gap states and the band gap width of the intrinsic a-Si:H active layer on the characteristics of a-Si PIN/OLED coupling pair was analyzed by a-Si:H PIN/OLED CAD simulation model. The CAD simulation model was carried out based on a-Si PIN Hack & Shur model and OLED TCL transport model. At the same band gap width, for the intrinsic a-Si:H active layer with the higher density of gap states, the reverse current of a-Si PIN trended to be saturated at the higher reverse bias voltage. As a result, I-V curve of a-Si PIN/OLED around the turn point Vt became smoother with the increase of the density of gap states. At the same state density, the light induced current of a-Si PIN increased against the band gap width, assuming the input light had the same spectrum as AM1.5 solar light. Thus the luminance emitted from OLED increased with the decrease of the band gap width because OLED belongs to the light-emitting device controlled by current. The simulation results also showed that the influence of the state density intensified with the increase of the band gap of a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A18.18
Copyright
Copyright © Materials Research Society 2003

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References

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