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Numerical Simulation of Scanning Speed and Supercooling Effects During Zone-Melting-Recrystallization of Soi Wafers

Published online by Cambridge University Press:  26 February 2011

Sharon M. Yoon  and
Loannis N. Miaoulis
Sharon M. Yoon
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, Massachusetts 02155
Loannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, Massachusetts 02155
*
author to whom all correspondance should be addressed
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Abstract

The effects of scanning speed and supercooling were studied during zone-meltingrecrystallization (ZMR) of silicon-on-insulator (SOI) wafers. Using finite difference methods, a numerical simulation of the ZMR process was developed which captures all of the optical and thermal property changes during phase transformation. The effects of supercooling and scanning speed on the temperature profiles, the total width of the melt-zone and the width of ‘slush’ region were investigated. The melt-zone width increases for increasiongf thdee gfrreeeezsi nogf supercooling and decreases for increasing strip heater velocities. The combined effects on the melt-zone width were shown for various scanning speeds and degrees of supercooling. Supercooling also had a significant effect on the size of the freezing ‘slush’ region which was shown to decrease for increasing degrees of supercooling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 453
Copyright
Copyright © Materials Research Society 1992

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