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Numerical Simulation and Experimental Investigation of the Time-Of-Flight Technique Applied to a-Si:H/a-SiGe:H-Heterojunctions

Published online by Cambridge University Press:  01 January 1993

Rudi Brüggemann ,
Norbert Bernhard ,
Charles Main  and
Gottfried H. Bauer
Rudi Brüggemann
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart,, Pfaffenwaldring 47, D-7000 Stuttgart 80,, Federal Republic of Germany
Norbert Bernhard
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart,, Pfaffenwaldring 47, D-7000 Stuttgart 80,, Federal Republic of Germany
Charles Main
Affiliation:
Department of Electronic & Electrical Engineering, Dundee Institute of Technology, Bell Street, Dundee DDI 1HG, Scotland, UK
Gottfried H. Bauer
Affiliation:
Department of Electronic & Electrical Engineering, Dundee Institute of Technology, Bell Street, Dundee DDI 1HG, Scotland, UK
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Abstract

We report on a comparative study, employing the TOF-technique for the characterization of the properties of a-Si:H/a-SiGe:H-heterojunctions. Both the simulated and experimental electron current transients exhibit a pronounced difference depending on the direction of movement of the excess carriers (from the a-Si:H into the a-SiGe:H or vice versa). For the movement from the low bandgap a-SiGe:H into the a-Si:H we find a char¬acteristic increase in the transient current at room temperature, which, as the simulation can reveal, is attributed to the higher drift mobility in the a-Si:H. A drop in the current is observed when the direction for the transit is from a-Si:H to a-SiGe:H. The post-transit behaviour is dominated by the large amount of trapped carriers which remain on the SiGe side of the sample. The situation for a high barrier between a-Si:H and a-SiC:H and the influence of various parameters on the shape of the current transient are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 413
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Bernhard, N., Bauer, G. H., Proc. European PV Conference, Montreux, 1992, in print.Google Scholar
[2] Shapiro, F., J.non-Cryst.Sol. 137&138, 451 (1991).Google Scholar
[3] Arkhipov, V. et al., Phil. Mag. B, 66, 443 (1992).Google Scholar
[4] Main, C., Berkin, J., Barr, G., Chelsea "Amorphous and Liquid Semiconductors' Meeting' 1988, unpublished.Google Scholar
[5] Brüggemann, R., Schumm, G., Main, C., Berkin, J., Bauer, G. H., J. non-Cryst. Sol. 137&138, 359 (1991).Google Scholar
[6] Bruggemann, R., Bernhard, N., Main, C. and Bauer, G.H., Chelsea "Amorphous and Liquid Semiconductors' Meeting" 1991, University of London, unpublished.Google Scholar
[7] Wolfe, Charles M., Holonyak, Nick, Stillman, Greg. E., Physical Properties of Semiconductors, (Prentice-Hall, Englewood Cliffs., 1989) chapter 9.Google Scholar
[8] Aljishi, S., 125 Shu, J. and Ley, L., Mat. Res. Soc. Symp. Proc. 149, ed. Madan, A. et al. (MRS, Pittsburgh, 1989), 125.Google Scholar
[9] Wu, Z. Y., Siefert, J. M., Equeer, B., J. non-Cryst. Sol. 137&138, 927 (1991).Google Scholar
[10] Marshall, J.M., Berkin, J., Main, C., Phil. Mag. B 56, 641 (1987).Google Scholar
[11] Nebel, C.E., Weller, H.C. and Bauer, G.H., Conf. Records 20th IEEE Photovoltaic Specialists Conf. (IEEE, 1988), 229; Nebel, C., PhD Thesis, Universitat Stuttgart (1989); Karg, F., PhD Thesis, Techn. Universitat Mvinchen (1987); Vanderhagen, R., Longeaud, C., Proc. Europ. PV Conf., ed. Solomon, J., Equer, B., Helm, P. (Kluwer, Dordrecht, 1988) p.987.Google Scholar