Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:29:34.322Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation of Special Orientations During Heteroepitaxial Growth of Diamond on Silicon

Published online by Cambridge University Press:  15 February 2011

Y. Tzou ,
R. Raj ,
J. Bruley ,
F. Ernst  and
M. Riihle
Y. Tzou
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
R. Raj
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. Bruley
Affiliation:
Max-Planck-Institut für Metallforschung, Stuttgart, Germany.
F. Ernst
Affiliation:
Max-Planck-Institut für Metallforschung, Stuttgart, Germany.
M. Riihle
Affiliation:
Max-Planck-Institut für Metallforschung, Stuttgart, Germany.
Get access

Abstract

The orientation relationships that develop in the early stages of diamond nucleation on silicon, were examined by TEM and HRTEM. The films were produced by microwave plasma assisted CVD. Two types of interface regions were identified. In one case an amorphous interlayer was observed and the nucleation of diamond was nanocrystalline. In the second case the interface was apparently free from a second phase; in these instances the diamond and silicon lattices formed special orientations. The special orientations were identified as the following: (a) <110> 60 degree rotation, (b) <110> 90 degree rotation and (c) diamond {111} plane tilted 6 degrees from silicon {220} plane. The orientation relationships are analyzed in terms of geometric models that seek the best fit between the diamond and silicon lattices at the interface plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 517
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, L., Pirouz, P., Argoitia, A., Ma, J.S., and Angus, J.C., Appl. Phys. Lett. 63, 1336 (1993).Google Scholar
2. Zhu, W., Wang, X.H., Stoner, B.R., Ma, G.H.M., Kong, H.S., Braun, M.W.H., and Glass, J.T., Phys. Rev. B, 47, 6529 (1993).Google Scholar
3. Wolter, S.D., Stoner, B.R., Glass, J.T., Ellis, P.J., Buhaenko, D.S., Jenkins, C.E., and Southworth, P., Appl. Phys. Lett. 62, 1215 (1993).Google Scholar
4. Jiang, N., Zhang, Z., Sun, B.W., and Shi, D., Appl. Phys. Lett. 63, 328 (1993).Google Scholar
5. Tzou, Y., Raj, R., Bruley, J., Ernst, F., and Rühle, M., submitted to Journal of Materials Research, 1993 Google Scholar
6. Matthews, J.W., in Dislocations in Solids, Vol. 2, edited by Nabarro, F.R.N. (North-Holland publishing company, New York, 1979), pp. 478–481.Google Scholar
7. Mitsuda, K., Kojima, Y., Yoshida, T., and Akashi, K., J. Mater. Sci. 22, 1557 (1987).Google Scholar