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Nucleation and Growth Processes in OMCVD of GaAs

Published online by Cambridge University Press:  25 February 2011

S. K. Shastry  and
J. Hefter
S. K. Shastry
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
J. Hefter
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254
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Abstract

The initial stages of GaAs growth on mirror-polished metal (W, Mo), semiconductor (Si, GaAs), and insulator (alumina) substrates have been experimentally studied in the organometallic chemical vapor deposition (OMCVD) process. Growth on the metallic substrates is often polycrystalline and nonepitaxial, while epitaxial GaAs layers with preferred orientations can be grown relatively easily on the nonmetallic substrates. The rate of nucleation of GaAs on all the substrates is found to increase with increasing arsine flow rate and with decreasing growth temperature. Our experimental results suggest that the GaAs nucleation process on all the substrates consists of an initial condensation and nucleation of gallium and subsequent formation of GaAs by arsenic supersaturation. In addition, following the nucleation of GaAs, a decrease in the substrate temperature is observed until further GaAs nucleation occurs, suggesting continued supersaturation. The nonepitaxial growth on the metallic substrates is attributed to the high rate of GaAs nucleation on these substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 33
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Manasevit, H. M., J. Cryst. Growth 55, 1 (1981).CrossRefGoogle Scholar
2. Duchemin, J. P., Bonnet, M., Koelsch, F. and Huyghe, D., J. Cryst. Growth 45, 181 (1978).CrossRefGoogle Scholar
3. Tandon, J. L. and Yeh, Y. C. M., J. Electrochem. Soc. 132, 662 (1985).Google Scholar
4. Ludowise, M. J., J. Appl. Phys. 58. R31 (1985).CrossRefGoogle Scholar
5. Shastry, S. K., Zemon, S., and Oren, M., J. Cryst. Growth 77, 503 (1986).CrossRefGoogle Scholar
6. Biegelsen, D. K., Ponce, F. A., Smith, A. J., and Tramontana, J. C., J. Appl. Phys. 61, 1856 (1987).Google Scholar
7. Chopra, K. L., Thin Film Phenomena, (McGraw-Hill, New York, 1969), p. 164.Google Scholar
8. Shastry, S. K., Ph.D. thesis, Rensselaer Polytechnic Institute, 1982.Google Scholar
9. Thurmond, C. D., J. Phys. Chem. Solids 26. 785 (1965).Google Scholar
10. Arthur, J. R., J. Phys. Chem. Solids 28, 2257 (1967).CrossRefGoogle Scholar
11. Blank, J. M. and Russell, V. A., Trans. the Metallurgical Society of AIME 236, 291 (1966).Google Scholar
12. Venables, J. A. and Prince, G. L., in Epitaxial Growth, edited by Matthews, J. M. (Academic Press, New York, 1975), Ch. 4.Google Scholar
13. Shastry, S. K., Symp. on Initial Stages of Epitaxy, Anaheim, CA, MRS Proc. 94, 1987 (to be published).Google Scholar