Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-10T01:03:28.123Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation and Growth of Ultrathin Epitaxial Metal Silicides on Silicon

Published online by Cambridge University Press:  26 February 2011

J. L. Batstone ,
R. T. Tung ,
Julia M. Phillips  and
J. M. Gibson
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Get access

Abstract

Growth of epitaxial single crystal nickel and cobalt disilicide films on silicon is performed under UHV conditions by deposition of Co or Ni on silicon followed by a high temperature reaction to form the silicide. The uniformity and perfection of ultrathin epitaxial layers has been studied using transmission electron microscopy. Mechanisms controlling island growth are discussed. Island nucleation observed in pseudomorphic films of NiSi2 /Si(100) (∼60Å thick) is shown to be the result of the difference in symmetry between the NiSi2 and Si. Islands related by a translation vector a/4<111> show an equilibrium island separation of 15±1.5Å. The boundary between islands is described as a coreless defect. In comparison,, pseudomorphic layers of CoSi2 /Si(111) are observed up to thicknesses ∼30Å. Pinholes are commonly observed in CoSi2 /Si(111) thin films. Finite contact angles (∼50) between substrate and deposit suggest a desire for three-dimensional growth under equilibrium conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 253
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Tung, R.T., Gibson, J.M. and Poate, J.M., Phys. Rev. Lett. 50, 429, (1983)Google Scholar
[2]Tung, R.T.Phys. Rev. Lett. 52, 461, (1984)Google Scholar
[3]Liehr, M., Schmidt, P.E., LeGoues, F.K. and Ho, P.S., Phys. Rev. Lett. 54, 2139 (1985)Google Scholar
[4]Hauenstein, R.J., Shlesinger, T.E., McGill, T.C., Hunt, B.D. and Schowalter, L.J., App. Phys. Lett. 47, 853, (1985)Google Scholar
[5]van Loenen, E.J., Frenken, J.W.M., van der Veen, J.F. and Valeri, S., Phys. Rev. Lett. 54, 827 (1985)Google Scholar
[6]Tung, R.T. and Batstone, J.L., These proceedingsGoogle Scholar
[7]Tung, R.T., Levi, A.F.J. and Gibson, J.M., App. Phys. Lett. 48, 635, (1986)Google Scholar
[8]Phillips, J.M., Batstone, J.L., Hensel, J.C. and Cerullo, M., To be published in App. Phys. Lett.Google Scholar
[9]Tung, R.T. and Batstone, J.L., Submitted to App. Phys. Lett.Google Scholar
[10]Hunt, B.D., Lewis, N., Hall, E.L., Turner, L.G., Schowalter, L.J., Okamoto, M. and Hashimoto, S., Mat. Res. Soc. Symp. Proc. 56, 151 (1986)Google Scholar
[11]Stowell, M.J. in Epitaxial Growth B p.437 (ed: Matthews, J.W., Academic Press 1975)Google Scholar
[12]Cherns, D., Hetherington, C.J.D. and Humphreys, C.J., Phil. Mag. A 49, 165, (1984)Google Scholar
[13]Pond, R.C., Mat. Res. Soc. Symp. Proc. 56, 3, (1986)Google Scholar
[14]Batstone, J.L., Gibson, J.M., Tung, R.T. and Levi, A.F.J., App. Phys. Lett. SubmittedGoogle Scholar
[15]Wierenga, P.E., Kubby, J.A. and Griffith, J.E., Phys. Rev. Lett.Google Scholar
[16]Phillips, J.M., Batstone, J.L., Hensel, J.C. and Cerullo, M., These ProceedingsGoogle Scholar
[17]Batstone, J.L., Phillips, J.M. and Gibson, J.M., Mat. Res. Soc. Symp. Proc. 91, (1987)Google Scholar
[18]Gibson, J.M., Batstone, J.L. and Tung, R.T., App. Phys. Lett. 51, 45, (1987)Google Scholar
[19]Cherns, D. and Pond, R.C., Mat. Res. Soc. Symp. Proc. 25, 423, (1984)Google Scholar