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Nucleation and Growth of Diamond Thin Films: The Role of Temperature and Pressure

Published online by Cambridge University Press:  01 February 2011

J. Morales
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Universidad S/N, San Nicolás, Nuevo León 66450 México
R. Bernal
Affiliation:
Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo, Sonora 83190 México
C. Cruz-Vazquez
Affiliation:
Departamento de Investigación en Polímeros y Materiales, Universidad de Sonora, Apartado Postal 130, Hermosillo, Sonora 83000 México
E.G. Salcido-Romero
Affiliation:
Departamento de Investigación en Polímeros y Materiales, Universidad de Sonora, Apartado Postal 130, Hermosillo, Sonora 83000 México
V.M. Castaño
Affiliation:
Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A. P. 1–1010, Querétaro, Querétaro 76000 México
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Abstract

Diamond thin films were deposited onto Si (100) substrates using liquid a solution of water and acetone, ethanol, methanol and commercial Tequila as precursors by the Pulsed Liquid Injection Chemical Vapor Deposition (PLICVD) technique. Temperature was varied from 550 °C to 850 °C. In this work we attempted to find a crystal diameter dependence on temperature and pressure from the experimental data. The goal in this work is to found a function that can be adjusted to the experimental data.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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