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Nucleation and Abnormal Grain Growth of Alpha-A12O3 in Gamma-Alumina Matrix

Published online by Cambridge University Press:  15 February 2011

T. C. Chou  and
T. G. Nieh
T. C. Chou
Affiliation:
Lockheed Missiles and Space Company, Research and Development Division, O/93-10, B/204, Palo Alto, CA 94304
T. G. Nieh
Affiliation:
Lockheed Missiles and Space Company, Research and Development Division, O/93-10, B/204, Palo Alto, CA 94304
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Abstract

The microstructures of reactive sputter-deposited alumina films have been studied by transmission electron microscopy. The as-deposited films contained γ-A12O3 phase in an amorphous alumina matrix. Annealing of the films at 1200° C for 2 h resulted in nucleation and concurrent anomalous grain growth of α-A12O3 in a polycrystaUine γ-Al2O3 matrix which exhibited a layered microstructure and was strongly textured along [001]. The grain sizes of α-A12O3 varied from 3 to 20 μm, while the average grain size of γ-A12O3 was only about 50 nm. It appears that the nucleation kinetics of a-A12O3 was slow. As a result, the abnormal grain growth of α-A12O3 proceeded by consuming surrounding γ-Al2O3 grains. An atomic model is presented to explain the origin of layered structure in γ-A12O3. The nucleation mechanism of a-A12O3 in γ-alumina matrix is suggested. Orientation relationships between γ- and α-A12O3 are reported. The anomalous grain growth of α- A12O3 is discussed in terms of γ/α interface boundary migration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 345
Copyright
Copyright © Materials Research Society 1992

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References

1. Thornton, J. A. and Chin, J., Ceram. Bulletin 56, 504–12 (1977).Google Scholar
2. Movchan, B. A. and Demchishin, A. V., Z. Metal. Metalloved. 28, 653–60 (1969).Google Scholar
3. Frieser, R. G., J. Electrochem. Soc. 113, 357–60 (1966).Google Scholar
4. Salama, C. A. T., J. Electrochem. Soc. 117,913-17 (1970).Google Scholar
5. Pratt, I. H., Solid State Technol. 12, 49 (1969)Google Scholar
6. Dragoo, A. L. and Diamond, J. J., J. Am. Ceram. Soc. 50, 68–574 (1967).Google Scholar
7. Khakhanashvilli, K. G., Tavadze, F. N., Shalamberidze, O. P., and Kuteliya, E. R., Problemy Spetsial'noi Elektrometallurgii 3, 48–54 (1987).Google Scholar
8. Lux, B., Colombier, C., Altena, H., and Stjemberg, K., Thin Solid Films 138, 49–64 (1986).Google Scholar
9. Skogsmo, J., Liu, P., Chatfield, C., and Norden, H., 12th International Plansee Seminar V.3, (Metallwerk Plansee Gmbh, Reutte, Tirol, Austria, 1989), pp. 129–42.Google Scholar
10. Chou, T. C. and Nieh, T. G., Thin Solid Films (in press).Google Scholar
11. Thompson, C. V., Floro, J., and Smith, H. I., J. Appl. Phys. 67, 4099 (1990).Google Scholar
12. Chou, T. C. and Nieh, T. G., submitted to J. Mat. Res.Google Scholar