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Published online by Cambridge University Press: 21 February 2011
This is the first NMR study of a-Si:H which measures the 29Si spin-lattice relaxation time, T1. Measurements of T1 are useful in learning about the silicon network structure and the localized states within the mobility gap. Dangling-bonds are randomly distributed in device quality materials but are inhomogeneously distributed in nondevice quality materials. There are two simultaneously occurring dangling-bond spin-lattice relaxation mechanisms: one is through the spin-orbit coupling modulated by thermal excitation of “two-level systems”, and the other is through hopping conduction between localized states near the Fermi level.