Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:25:38.755Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Technique For Rtp Annealing Of Compound Semiconductors

Published online by Cambridge University Press:  10 February 2011

M. Fu ,
V. Sarvepalli ,
R. K. Singh ,
C. R. Abernathy ,
X. Cao ,
S. J. Pearton  and
J. A. Sekhar
M. Fu
Affiliation:
Micropyretics Heaters International (MLI) Inc., 1776 Mentor Avenue, Cincinnati, OH 45212
V. Sarvepalli
Affiliation:
Micropyretics Heaters International (MLI) Inc., 1776 Mentor Avenue, Cincinnati, OH 45212
R. K. Singh
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
X. Cao
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
Dept. of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
J. A. Sekhar
Affiliation:
Micropyretics Heaters International (MLI) Inc., 1776 Mentor Avenue, Cincinnati, OH 45212
Get access

Abstract

We introduce for the first time a novel rapid thermal processing (RTP) unit called ZapperTM, which has recently been developed by MHI Inc. and the University of Florida for high temperature thermal processing of semiconductors. This ZapperTM unit is capable of reaching much higher temperatures (>1500 °C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant activation annealing studies of Si+-implanted GaN thin films (with and without an AIN encapsulation layer) using the ZapperTM unit at temperatures up to 1500 °C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AIN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the ZapperTM unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide bandgap compound semiconductors that require very high processing temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 345
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for examples in GaN and Related Materials for Device Applications, edited by Pearton, S. J. and Kuo, C. (MRS Bulletin 22, February 1997).Google Scholar
2. See for examples in SiC Electronic Materials and Devices, edited by Capano, M. A. and Trew, R. (MRS Bulletin 22, March 1997).Google Scholar
3. Shenoy, J. N., Cooper, J. A. Jr., and Melloch, M. R., IEEE Elec. Dev. Lett. 18, p. 93 (1997).Google Scholar
4. Zolper, J. C., Shul, R. J., Baca, A. G., Pearton, S. J., Wilson, R. G. and Stall, R. A., Appl. Phys. Lett. 68, p. 273 (1996).Google Scholar
5. Zolper, J. C. and Pearton, S. J., in Proc. Wide Bandgap Semiconductor Symp., edited by Dismukes, J., et al. (The Electrochemistry Soc., Pennington, NJ, 1997), pp. 268–275.Google Scholar
6. Zolper, J. C., Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Crawford, M. Hagerott and Karlicek, R. F. Jr.,, Appl. Phys. Lett. 70, p. 2729 (1997).Google Scholar
7. Zolper, J. C., Han, J., Biefeld, R. M., Deusen, S. B. Van, Wampler, W. R., Reiger, D. J., Pearton, S. J., Williams, J. S., Tan, H. H., Karlicek, R. J. Jr., and Stall, R. A., submitted for publication in J. Appl. Phys. (1997).Google Scholar
8. Roozeboom, F. in Rapid Thermal Processing: Science and Technology, edited by Fair, R. B. (Academic Press, Inc., New York, NY 1993), pp. 349–423.Google Scholar
9. Sekhar, J. A., Penumella, S. and Fu, M. in Transient Thermal Processing Techniques in Electronic Materials, edited by Ravindra, N. M. and Singh, R. K. (TMS, Warrendale, PA 1996), pp. 171–175.Google Scholar
10. MHI Heating Element Handbook, Version 8 (Cincinnati, OH 1997).Google Scholar
11. Abernathy, C. R., Mat. Sci. Eng. Rep. 14, p. 203 (1995).Google Scholar
12. Mileham, J. R., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Shul, R. J. and Kilcogne, S. P., Appl. Phys. Lett. 67, p. 1119 (1995).Google Scholar
13. Vartuli, C. B., Pearton, S. J., Lee, J. W., Abernathy, C. R., MacKenzie, J. D., Zolper, J. C., Shul, R. J. and Ren, F., J. Electrochem. Soc. 143, p. 3681 (1996).Google Scholar
14. Pearton, S. J., Int. J. Mod. Phys. B7, p. 4687 (1993).Google Scholar