Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T08:52:02.234Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

Published online by Cambridge University Press:  10 February 2011

S. A. Tabatabaei ,
G. A. Porkolab ,
S. Agarwala ,
F. G. Johnson ,
S. A. Merritt ,
O. King ,
M. Dagenais ,
Y. J. Chen  and
D. R. Stone
S. A. Tabatabaei
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
G. A. Porkolab
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
S. Agarwala
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
F. G. Johnson
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
S. A. Merritt
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
O. King
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
M. Dagenais
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
Y. J. Chen
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
D. R. Stone
Affiliation:
Joint Program for Advanced Electronic: Materials Electrical Engineering Department, University of Maryland and Laboratory for Physical Sciences, College Park, Maryland 20742
Get access

Abstract

This paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the performance of high speed InGaAs detectors. Dark current density for circular diodes with a diameter size varying between 10 and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness of various surface preparation techniques was studied by measuring the immediate improvement in dark current density, as well as its long-term stability. The benefits of this new technique compared to other techniques we have investigated include improved device characteristics, long-term stability, as well as a much less critical process to achieve optimum surface properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 317
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Burrus, C.A., Bowers, J.E., Tucker, R.S.; "Improved very high-speed packaged GaInAs pin punch-through photodiode", Electron. Lett., 21, p. 262, (1985).CrossRefGoogle Scholar
2. Wake, D., Blank, L.C., Walking, R.H., Henning, I.D.; “Top-illuminated InGaAs/InP pin photodiodes with a 3 dB bandwidth in excess of 26 GHz”, IEEE Electron. Dev. Lett., 9, p. 226, (1988).CrossRefGoogle Scholar
3. Porkolab, G.A., Chen, Y.J., Merritt, S.A., Tabatabaei, S.A., Agarwala, S., Johnson, F.G., King, O., Dagenais, M., Wilson, R.A., Stone, D.R.; “Wet-chemistry surface treatment for dark current reduction that preserves lateral dimensions of reactive ion etched Ga0.471n0.53As p-i-n diode photodetectors”, Photonics Tech. Lett., 9, p.490, (1997).CrossRefGoogle Scholar
4. Carey, K.W., Wang, S.Y., Chang, J.S.C., Nauka, K., "Leakage current in GaInAs/InP photodiodes grown by OMVPE", J. Cryst. Growth, 98, p. 90 (1989).CrossRefGoogle Scholar
5. Kim, D.S., Chao, C.P., Beyzavi, K., Burrows, P.E., Forrest, S.R., “Surface passivation of InP/InGaAs heterojunction bipolar transistors for opto-electronic integration”, J. Electronic Materials, 25, (1996).CrossRefGoogle Scholar