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A Novel Surface Pivation Structure for III-V Compound Semiconductors Utilizing a Silicon Interface Control Layer and its Application

Published online by Cambridge University Press:  10 February 2011

Tamotsu Hashizume  and
Hideki Hasegawa
Tamotsu Hashizume
Affiliation:
Research Center for Interface Quantum Electronicsand Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo, Japan, [email protected]
Hideki Hasegawa
Affiliation:
Research Center for Interface Quantum Electronicsand Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo, Japan, [email protected]
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Abstract

The present status of surface passivation research for III-V compound semiconductors utilizing a novel unique structure including a silicon interface control layer (Si ICL) is presented and discussed. The basic principle of passivation is to insert an ultrathin MBE-grown Si layer between the III-V compound semiconductor and a Si-based thick insulator so as to terminate the surface bonds of the III-V material with Si atoms and then to transfer Si-bonds smoothly to those of the Si based insulator. Based on the calculation of quantized levels in strained Si ICL, the passivation structure was optimized. Such a structure was realized by partial nitridation of Si ICL surface. In-situ surface characterization techniques including newly developed UHV contactless C-V technique, were used for optimization of each passivation step. Surface reconstruction of initial semiconductor surface was found to have a great influence on passivation. In the case of GaAs, the c(4×4) surface is preferable to the (2×4) surface. The novel process has realized the oxide-free surface passivation of InP with a Nssmin value of 2 × 1010 cm−2 eV−1. Furthermore, the novel passivation technique has been successfully applied to the fabrication of MISFETs and IGHEMTs, and the passivation of quantum structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 45
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Passlack, M., Schubert, E. F, Hobson, W. S., Hong, M., Moriya, N., Chu, S. N. G., Konstadinidis, K., Mannaerts, J. P., Schnoes, M. L. and Zydzik, G. J., J. Appl. Phys. 77, 686(1995).Google Scholar
[2] Hasegawa, H. and Ohno, H.:J. Vac. Sci. Technol. 4, 1130(1986).Google Scholar
[3] Hasegawa, H., Akazawa, M., Matsuzaki, K., Ishii, H. and Ohno, H., Jpn. J. Appl. Phys. 27, 2265(1988).Google Scholar
[4] Akazawa, M., Ishii, H. and Hasegawa, H., Jpn. J. Appl. Phys. 30, 3744 (1991).Google Scholar
[5] Hasegawa, H., Akazawa, M., Ishii, H. and Matsuzaki, K., J. Vac. Sci. Technol. B7, 870 (1989).Google Scholar
[6] Kodama, S., Koyanagi, S., Hashizume, T. and Hasegawa, H., Jpn. J. Appl. Phys. 34, 1143(1995).Google Scholar
[7] Van de Walle, C.G., Phys. Rev. B 39, 1871(1989).Google Scholar
[8] Sakai, T., Kohno, M., Hirae, S., Nakatani, I., and Kusuda, T., Jpn. J. Appl. Phys., 32, 4005(1993).Google Scholar
[9] Yoshida, T., Hasegawa, H. and Sakai, T.., Jpn.J. Appl. Phys., 38, (1999) (in press).Google Scholar
[10] Taylor, A. G., Turner, A. R., Pemble, M. E. and Joyce, B. A., J. Cryst. Growth 172, 275(1997).Google Scholar
[11] Tsurumi, N., Ishikawa, Y., Fukui, T. and Hasegawa, H.: Jpn. J. Appl. Phys. 37,1501(1998).Google Scholar
[12] Matsumoto, Y., Suzuki, T., Haga, K., Sasaki, H., Sakuma, M., Hanajiri, T., Sugano, T. and Katoda, T.: Proc. 7th Int. Conf. Indium Phosphide and Related Materials (1995), p. 609.Google Scholar
[13] Fujikura, H., Kodama, S., Hashizume, T. and Hasegawa, H., J. Vac. Sci. Technol. B14, 2888(1996).Google Scholar