Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-27T11:21:42.496Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Reducing Chemistry for Supercritical Fluid Deposition of Copper

Published online by Cambridge University Press:  01 February 2011

Takeshi Momose ,
Tomohiro Ohkubo ,
Masakazu Sugiyama  and
Yukihiro Shimogaki
Takeshi Momose
Affiliation:
[email protected], The University of Tokyo, Department of Materials Engineering,, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan, Tokyo, Tokyo, 113-8656, Japan
Tomohiro Ohkubo
Affiliation:
[email protected], The University of Tokyo, Department of Materials Engineering,, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Tokyo, 113-8656, Japan
Masakazu Sugiyama
Affiliation:
[email protected], The University of Tokyo, Department of Electronic Engineering, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Tokyo, 113-8656, Japan
Yukihiro Shimogaki
Affiliation:
[email protected], The University of Tokyo, Department of Materials Engineering,, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Tokyo, 113-8656, Japan
Get access

Abstract

We study new deposition chemistry in Cu-SCFD (supercritical fluid deposition), especially effect of acetone is investigated as reducing agent and additives into H2 reducing Cu-SCFD. Acetone reduction yields Cu film deposition onto Ru coated Si substrate, because Ru has catalytic effect to generate reducing agent from acetone. When acetone is added into H2 reducing chemistry, the solubility of precursor is enhanced approximately 50 %, which is so-called “entrainer effect”. Ethanol can enhance the deposition of Cu in H2 reduction chemistry, which is a solvent effect. Two effects of entrainer effect by acetone and solvent effect by ethanol works independently, without interfering each other.

Keywords

Cufilmchemical reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-20
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1 International Technology Roadmap for Semiconductors (ITRS) 2004update.Google Scholar
2 Blackburn, J. M., Long, D. P., Cabanas, A., Watkins, J. J., SCIENCE 294 141 (2001).Google Scholar
3 Kondoh, E., and Kato, H., Micro. Eng. 64 495 (2002).Google Scholar
4 Cabanas, A., Shan, X., and Watkins, J. J., Chem. Mater. 15 2910 (2003).Google Scholar
5 McHugh, M. A., Krukonis, V. J.: Supercritical Fluid Extraction (Butterworth-Heinemann, Boston, 1994).Google Scholar
6 M'Hamdi, R., Bocquet, J. F., Pommier, C.; J. Supercrit. Fluids 4 55 (1991).Google Scholar
7 Ashraf-Khorassani, M., Hellgeth, J. W., Taylor, L. T.; Anal. Chem. 59 2077 (1987).Google Scholar
8 Momose, Takeshi, Ohkubo, Tomohiro, Sugiyamal, Masakazu, and Shimogaki, Yukihiro, Proc. Advanced Metallization Conference 2005 (Material Research Society, 2005) pp.519.Google Scholar
9 Momose, Takeshi, Sugiyama, Masakazu, and Shimogaki, Yukihiro, Proc. Advanced Metallization Conference 2004 (Material Research Society, 2005) pp.627.Google Scholar
10 Momose, Takeshi, Sugiyama, Masakazu, and Shimogaki, Yukihiro, Japanese Journal of Applied Physics, 44 L1199 (2005).Google Scholar
11 Kim, H., Koseki, T., Ohba, T., Ohta, T., Kojima, Y., Sato, H., and Shimogaki, Y., J. Electrochem. Soc. 152 G594 (2005).Google Scholar
12 Kim, H., Kojima, Y., Sato, H., Yoshii, N., Hosaka, S., and Shimogaki, Y., Jpn. J. Appl. Phys. 45 L233 (2006).Google Scholar
13 Kim, H., Koseki, T., Ohba, T., Ohta, T., Kojima, Y., Sato, H., Hosaka, S., and Shimogaki, Y., Appl. Surf. Sci. 252 3938 (2006).Google Scholar