Article contents
Novel Plasma Control Method in PECVD for Preparing Microcrystalline Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
A novel plasma enhanced vapor deposition (PECVD) technique employing biased wall (BW) method has been developed for the enhanced growth rate of the hydrogenated microcrystalline silicon (μc-Si:H) films. Using this method, we have achieved a growth rate of more than 6Å/sec for the formation of μc-Si-H having an average grain size of 200Å; at 350°C.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
REFERENCES
- 4
- Cited by