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Novel Organic Light-Emitting Transistors with PN-Hetero-Boundary Carrier Recombination Sites Fabricated by Lift-off Patterning of Organic Semiconductor Thin Films

Published online by Cambridge University Press:  26 February 2011

Naotoshi Suganuma ,
Noriyuki Shimoji ,
Yoshiaki Oku  and
Kazumi Matsushige
Naotoshi Suganuma
Affiliation:
[email protected], Kyoto university, Kyoto university, Yoshida-Honmachi, Sakyo-ku, Kyoto, 606-8501, Japan
Noriyuki Shimoji
Affiliation:
[email protected], Rohm Co., Ltd., Kyoto, 615-8585, Japan
Yoshiaki Oku
Affiliation:
[email protected], Rohm Co., Ltd., Kyoto, 615-8585, Japan
Kazumi Matsushige
Affiliation:
[email protected], Kyoto university, Dept. of Electronic Sci. & Tec., Kyoto, 615-8510, Japan
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Abstract

We have devised a novel organic light-emitting transistor (OLET) with PN-hetero-boundary combined with hole and electron transport materials along carrier channels. In this device, a clear modulation of the current and luminance with the gate voltage is observed. The luminance of 100 cd/m2 or more has been observed at the source-source voltage of 15 V with the turn-on voltage of 10 V or less, which is lower than that of OLETs based on a single organic material. We have implemented the horizontal PN-hetero-boundary structure for the first time by using the photolithographic patterning of the organic semiconductor thin-films. This patterning technique can be applied to fabrication of not only organic light-emitting transistors we report in this paper but also organic integrated circuits or organic displays.

Keywords

organicdisplaylithography (removal)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S03-14
Copyright
Copyright © Materials Research Society 2007

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References

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