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A Novel Nanotube-on-Insulator (NOI) Approach toward Single-Walled Carbon Nanotube Devices

Published online by Cambridge University Press:  01 February 2011

Xiaolei Liu
Affiliation:
[email protected], University of Southern California, Department of Electrical Engineering - Electrophysics, Los Angeles, CA, 90007, United States
Song Han
Affiliation:
[email protected], University of Southern California, Department of Electrical Engineering - Electrophysics, Los Angeles, CA, 90007, United States
Daihua Zhang
Affiliation:
[email protected], University of Southern California, Department of Electrical Engineering - Electrophysics, Los Angeles, CA, 90007, United States
Koungmin Ryu
Affiliation:
[email protected], University of Southern California, Department of Electrical Engineering - Electrophysics, Los Angeles, CA, 90007, United States
Chongwu Zhou
Affiliation:
[email protected], University of Southern California, Department of Electrical Engineering - Electrophysics, Los Angeles, CA, 90007, United States
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Abstract

We present a novel nanotube-on-insulator (NOI) approach to produce high-yield nanotube devices based on aligned single-walled carbon nanotubes. First, we managed to grow aligned nanotube arrays with controlled density on crystalline, insulating sapphire substrates, which bear analogy to industry-adopted silicon-on-insulator substrates. Based on the nanotube arrays, we demonstrated registration-free fabrication of both top-gated and polymer-electrolyte-gated field-effect transistors with minimized parasitic capacitance. In addition, we have successfully developed a way to transfer these aligned nanotube arrays to flexible substrates. Our approach has great potential for high-density, large-scale integrated systems based on carbon nanotubes for both micro- and flexible electronics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Iijima, S.; Ichihashi, T. Nature 1993, 363, 603605.Google Scholar
2 Dresselhaus, M. S.; Dresselhaus, G.; Avouris, Ph. Carbon Nanotubes: Synthesis, Structure, Properties and Applications; Springer: 2001.Google Scholar
3 Tans, S. J.; Verschueren, A. R. M.; Dekker, C. Nature(London) 1998, 393, 4952.Google Scholar
4 Appenzeller, J.; Knoch, J.; Derycke, V.; Martel, R.; Wind, S.; Avouris, Ph. Phys. Rev. Lett. 2002, 89, 126801.Google Scholar
5 Javey, A.; Kim, H.; Brink, M.; Wang, Q.; Ural, A.; Guo, J.; McIntyre, P.; McEuen, P.; Lundstrom, M.; Dai, H. Nat. Mater. 2002, 1, 241246.Google Scholar
6 Rosenblatt, S.; Yaish, Y.; Park, J.; Gore, J.; Sazonova, V.; and McEuen, P. L. Nano Lett. 2002, 2, 869872.Google Scholar
7 Javey, A.; Guo, J.; Wang, Q.; Lundstrom, M.; Dai, H. J. Nature(London) 2003, 424, 654657.Google Scholar
8 Wind, S. J.; Appenzeller, J.; Avouris, Ph. Phys. Rev. Lett. 2003, 91, 58301.Google Scholar
9 Kong, J.; Soh, H. T.; Cassell, A. M.; Quate, C. F.; Dai, H. J. Nature 1998, 395, 878881.Google Scholar
10 Song, H.; Liu, X.; Zhou, C. J. Am. Chem. Soc. 2005, 127, 52945295.Google Scholar
11 Shahidi, G. G. IBM J. Res. & Dev. 2002, 46, 121131.Google Scholar
12 Javey, A.; Wang, Q.; Ural, A.; Li, Y.; Dai, H. Nano Lett. 2002, 2, 929932.Google Scholar
13 Collins, P. C.; , Arnold; M. S., Avouris P Science, 2001, 292, 706709.Google Scholar
14 Lu, C.; Fu, Q.; Huang, S.; Liu, J. Nano Lett. 2004, 4, 623627.Google Scholar
15 Kocabas, C.; Meitl, M. A.; Gaur, A.; Shim, M.; Rogers, J. A. Nano Lett. 2004, 4, 24212426.Google Scholar
16 Bradley, K.; Gabriel, J.-P. P.; Grüner, G Nano Lett. 2003, 3, 13531355.Google Scholar
17 Li, Y; Kim, W.; Zhang, Y.; Rolandi, M.; Wang, D.; Dai, H. J. Phys. Chem. B 2001, 105, 1142411431.Google Scholar