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A Novel GaAs Bipolar Transistor Structure with GaInP-Hole Injection Blocking Barrier

Published online by Cambridge University Press:  26 February 2011

W. Pletschen ,
K. H. Bachem  and
T. Lauterbach
W. Pletschen
Affiliation:
Fraunhofer-Inst, für Angewandte Festkörperphysik, D-7800 FREIBURG, Germany
K. H. Bachem
Affiliation:
Fraunhofer-Inst, für Angewandte Festkörperphysik, D-7800 FREIBURG, Germany
T. Lauterbach
Affiliation:
Fraunhofer-Inst, für Angewandte Festkörperphysik, D-7800 FREIBURG, Germany
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Abstract

GaAs bipolar transistors of different emitter types have been fabricated from MOCVD grown lattice matched Ga0.5In0.5 P/GaAs layer structures using carbon for heavy base doping (p=2×1019 cm−3). Besides conventional heterojunction bipolar transistors we also investigated tunneling emitter bipolar transistors having 2 and 5 nm thin GalnP layers between emitter and base, which act as a hole repelling potential barrier in the valence band. Current gains up to 115 have been obtained at collector current densities of 104 A/cm2 even for this heavy base doping. All devices show an almost ideal output characteristics with large Early voltage and small offset voltage. From the temperature dependence of the collector current a small effective conduction band barrier at the heterointerface is determined which hardly affects electron injection into the base.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 493
Copyright
Copyright © Materials Research Society 1992

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References

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