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A Novel Bonding Technique Using Metal-Induced Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Markus D. Ong
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 1033 Crestview Dr Apt 216, Mountain View, CA, 94040, United States
Reinhold H. Dauskardt
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 416 Escondido Mall, Stanford, CA, 94305, United States
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Abstract

This study investigates the used of aluminum-induced crystallization of amorphous silicon is a potential bonding mechanism for a sandwich stack of films between two silicon substrates. Similar procedures using copper diffusion bonds have been in use, but these require temperatures as high as 400°C. Using the crystallization of amorphous silicon as the bonding mechanism has allowed the bonding temperature to be lowered by more than 100 K. Fracture experiments for a low-k material were conducted, and the results using amorphous silicon bonding was compared to epoxy bonding control experiments. Essentially identical results were obtained for the two bonding mechanisms. Low-temperature bonding techniques are of great interest to future progress in the microelectronics industry, and these results are promising advances.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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