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A Novel Bonding Technique Using Metal-Induced Crystallization of Amorphous Silicon
Published online by Cambridge University Press: 01 February 2011
Abstract
This study investigates the used of aluminum-induced crystallization of amorphous silicon is a potential bonding mechanism for a sandwich stack of films between two silicon substrates. Similar procedures using copper diffusion bonds have been in use, but these require temperatures as high as 400°C. Using the crystallization of amorphous silicon as the bonding mechanism has allowed the bonding temperature to be lowered by more than 100 K. Fracture experiments for a low-k material were conducted, and the results using amorphous silicon bonding was compared to epoxy bonding control experiments. Essentially identical results were obtained for the two bonding mechanisms. Low-temperature bonding techniques are of great interest to future progress in the microelectronics industry, and these results are promising advances.
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- Copyright © Materials Research Society 2007