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Nonvolatile memory MOS capacitors made of CdSe embedded ZrHfO high-k gate dielectric

Published online by Cambridge University Press:  20 May 2013

Chi-Chou Lin  and
Yue Kuo
Chi-Chou Lin
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
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Abstract

MOS capacitor composed of nc-CdSe embedded ZrHfO high-k gate dielectric stack was fabricated and characterized for nonvolatile memory functions. Detailed material and electrical properties have been investigated. With a large charge trapping capability, this kind of device can trap electrons or holes depending on the polarity and magnitude of the applied gate voltage. For the same stress time, the device trapped more holes than electrons under the same magnitude of gate voltage but different polarity. The negative differential resistance peak was observed at the room temperature due to the Coulomb blockade effect. The charge trapping mechanism was delineated with the constant voltage stress test. After 10 years of storage, about 56% of trapped charges still remain in the device.

Keywords

dielectricthin filmnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1562: Symposium DD – Emerging Materials and Devices for Future Nonvolatile Memories , 2013 , mrss13-1562-dd05-01
Copyright
Copyright © Materials Research Society 2013 

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