Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-09T09:34:32.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Nonstoichiometry and Doping of Zinc Oxide

Published online by Cambridge University Press:  15 February 2011

Arthur W. Sleight  and
Ruiping Wang
Arthur W. Sleight
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, OR 97331–4003, [email protected]
Ruiping Wang
Affiliation:
Applied Materials, Applied Materials, 3100 Bowers Ave/Mail Stop 1125, Sunnyvale, CA 95054
Get access

Abstract

Contrary to the commonly accepted model, we conclude that the zinc interstitials in Zn1+xO are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 453: Symposium R – Solid State Chemistry of Inorganic Materials , 1996 , 323
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, R., Sleight, A.W. and Cleary, D., Chem. Mater. 8, 433 (1996).Google Scholar
2. Wang, R., Sleight, A.W., Platzer, R. and Gardner, J.A., J. Solid State Chem. 122, 166 (1996).Google Scholar
3. Wang, R., King, L.L.H. and Sleight, A.W., J. Mater. Res. 11, 1659 (1996).Google Scholar
4. Wang, R., Sleight, A.W. and Subramanian, M.A., J. Solid State Chem. 125, 224 (1996).Google Scholar
5. Sawada, H., Wang, R. and Sleight, A.W., J. Solid State Chem. 122, 148 (1996).Google Scholar
6. Kingery, W.D., Bowen, H.K. and Uhlmann, D.R., Introduction to Ceramics, 2nd ed. (Wiley, New York, 1975), p. 159 & 891.Google Scholar
7. Kerridge, D.H. and Tariq, S.A., J. Chem Soc. (A), 1122 (1967).Google Scholar
8. Roberts, N., Wang, R., Sleight, A.W. and Warren, W.W., unpublished manuscript.Google Scholar
9. Hu, J. and Gordon, R.G., Mat. Res. Soc. Symp. Proc. 242, 743 (1992) and references therein.Google Scholar