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Nonlinear Laser Melting Of Indium Antimonide And Silicon

Published online by Cambridge University Press:  15 February 2011

Michael P. Hasselbeck  and
H. S. Kwok
Michael P. Hasselbeck
Affiliation:
Department of Electrical and Computer Engineering State University of New York at Buffalo, Amherst, New York 14260 USA
H. S. Kwok
Affiliation:
Department of Electrical and Computer Engineering State University of New York at Buffalo, Amherst, New York 14260 USA
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Abstract

Pulsed 10.6μm TEA CO2 laser light has been used to melt the semiconductors silicon and InSb. Measurements indicate that generation of free carriers necessary for melting may take place by nonlinear processes such as two-photon absorption or intraband avalanche ionization. If the semiconductor is sufficiently doped, melting may also result from linear free carrier absorption. In all cases, it appears that the molten depth exceeds several μm, which is much greater than obtained with lasers of shorter wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 97
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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