Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-20T01:03:10.305Z Has data issue: false hasContentIssue false
  • English
  • Français

Non-Equilibrium InSb/InAISb Diodes Grown by MBE

Published online by Cambridge University Press:  10 February 2011

A D Johnson ,
A B J Smout ,
J W Cairns ,
G J Pryce ,
A J Pidduck ,
R Jefferies ,
T Ashley  and
C T Elliott
A D Johnson
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
A B J Smout
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
J W Cairns
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
G J Pryce
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
A J Pidduck
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
R Jefferies
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
T Ashley
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
C T Elliott
Affiliation:
DERA, St. Andrews Road, Great Malvern, WR14 3PS, [email protected]
Get access

Abstract

The application of non-equilibrium transport techniques to Molecular Beam Epitaxy (MBE) grown InSb/InAlSb heterostructure diodes has produced practical devices such as midinfrared LED's and negative luminescent sources that operate at room temperature. By extending the epitaxial growth to vicinal InSb substrates it has been demonstrated that the temperature window for high quality epitaxy can be lowered by ∼12°C, giving greatly improved epilayer morphology. The degree of misorientation needed for given growth temperatures is shown from Atomic Force Microscope (AFM) measurements to be only ∼2°. In addition, the lower growth temperature gives improved dopant activation, lower trap densities and lower reverse bias leakage currents, with consequent benefits to device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ashley, T, Dean, A B, Elliott, C T, Pryce, G J, Johnson, A D & Wills, H, Appl. Phys. Lett. 66, No.4, pp481–3, (1995).Google Scholar
[2] Ashley, T, Elliott, C T, Gordon, N T, Hall, R S, Johnson, A D & Pryce, G J, Appl. Phys. Lett. 64, No. 18, pp2433–5, 1994.Google Scholar
[3] Ashley, T, Elliott, C T, Gordon, N T, Hall, R S, Johnson, A D & Pryce, G J, Infrared Physics & Technology, 3, pp1037–44, 1995.Google Scholar
[4] Ashley, T, Elliott, C T, Jefferies, R, Johnson, A D, Pryce, G J & White, A M, Appl. Phys. Lett. 70, (8), pp. 931–33, 1997.Google Scholar
[5] A J Norieka & Francombe, M H, J. Appl. Phys. 52, (12), pp. 7416–7420, 1981.Google Scholar
[6] Oe, Kunishige, Ando, Seigo & Sugiyama, Koichi, Jap. Journ. Appl. Phys. 19, No. 7, pp. L417–20, 1980.Google Scholar
[7] Williams, G M, Whitehouse, C R, Martin, T, Chew, N G, Cullis, A G, Ashley, T, Sykes, D E, Mackay, K & Williams, R H, J. Appl. Phys. 63, p1526, 1988.Google Scholar
[8] Droopad, R, Williams, R L & Parker, S D, Semicond. Sci. & Technol. 4, p 11, 1989.Google Scholar
[9] Parker, S D, Williams, R L, Droopad, R, Stradling, R A, K Barnham, W J, Holmes, S N, Laverty, J, Phillips, C C, Skuras, E, Thomas, R, Zhang, X, Staton-Bevan, A and Pashley, D W, Semicond. Sci. Technol. 4, pp. 663–676 (1989).Google Scholar
[10] Thompson, P E, Davis, J L, Yang, M-J, Simons, D S and Chi, P H, J. Appl. Phys. 74, (11), pp. 6686–6690 (1993).Google Scholar
[11] Johnson, A D, Williams, G M, Pidduck, A J, Whitehouse, C R, Martin, T, Elliott, C T & Ashley, T, Inst. Phys. Conf Ser. No. 144, Section 4, pp204–8, 1995.Google Scholar
[12] Santos, M B & Liu, W K, Inst. Phys. Conf. Ser. No. 144, Section 4, pp199–203, 1995.Google Scholar
[13] Smith, G W, Pidduck, A J, Whitehouse, C R, Glasper, J L & Spowart, J, J. Cryst. Growth 127, p996, 1993.Google Scholar
[14] Orme, C, Johnson, M D, Leung, K-T, Orr, B G, Smilauer, P & Vvedensky, D, J. Cryst. Growth 150, p128, 1995.Google Scholar
[15] Rost, M, Smilauer, P & Krug, J, Surf. Sci. 369, pp. 393–402, 1996.Google Scholar
[16] Elliott, C.T., Gordon, N.T., Phillips, T.J., White, A.M., Jones, C.L., Maxey, C.D. and Metcalfe, N.E., Journal of Electronic Materials, 25 (8), p1139, 1996 Google Scholar