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Nondestructive Study of Metal-Silicon Interfaces Using Soft X-Ray Emission Spectroscopy

Published online by Cambridge University Press:  03 September 2012

H. Watabe ,
M. Iwami ,
M. Hirai ,
M. Kusaka ,
H. Nakamura  and
H. Miyashita
H. Watabe
Affiliation:
Matsushita Research Institute, Tokyo, Inc., Matsuba-cho 2-7, Kadoma, Osaka 571, Japan
M. Iwami
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
M. Hirai
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
M. Kusaka
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700, Japan
H. Nakamura
Affiliation:
Osaka Electro-Communication University, Hatsu, Neyagawa, Osaka 572, Japan
H. Miyashita
Affiliation:
Department of Mechanical Engineering, Tohoku Gakuin University, 1-13-1 Chuoh Tagajyo, Miyagi 985, Japan
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Abstract

Si L2,3 valence band soft x-ray emission spectrum (SXES) due to an e ectron excitation for silicides shows a clear modification from that for Si single crystal. Using this fact in combination with the incident angle variation(IAV) device, a non-destructive in-depth analysis of a Au(thin film)-Si(lll) contact is successfully carried out. Also, the SXES method has clarified the fact that a fair amount of the Si-s valence band density of state (yB-DOS) is included in the upper part of the yB-DOS for a Au-Si alloy, or Au-silicide, due to the Au-Si bond formation, which is a clear contrast to proposals given so far.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 255
Copyright
Copyright © Materials Research Society 1994

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References

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