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Non-Destructive Measurement of Deep Embedded Defects in Silicon using Photoacoustic Microscope (PAM)

Published online by Cambridge University Press:  01 February 2011

Lu Xu ,
Donnacha Lowney ,
Patrick J McNally ,
Eva Gomez Fernandez  and
Jennifer Stopford
Lu Xu
Affiliation:
[email protected], Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, Dublin 9, Ireland, +353-1-700-5885, +353-1-700-5508
Donnacha Lowney
Affiliation:
[email protected], Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
Patrick J McNally
Affiliation:
[email protected], Dublin City University, School of Electronic Engineering,, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
Eva Gomez Fernandez
Affiliation:
[email protected], Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
Jennifer Stopford
Affiliation:
[email protected], Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
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Abstract

An automatic gas cell photoacoustic microscope has been used to characterize two laser machined air trenches in a silicon substrate from the back side. Both amplitude and phase images reveal the subsurface features. The frequency dependence of the photoacoustic signals with different laser spot sizes was compared with a 1-D model. The effect of lateral heat diffusion on subsurface defect characterization was investigated and the results can be applied to other photothermal techniques.

Keywords

layeredthermal conductivitylaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-17
Copyright
Copyright © Materials Research Society 2006

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References

references

1 Smith, W. L., Wells, C. G. and Bivas, A., “Evaluating voids and microcracks in Al metallization,” Semi conduct. Int., Jap. 1990 Google Scholar
2 Rosencwaig, A. and Gersho, A., “Theory of the photoacoustic effect with solids,” J. Appl. Phys. 47 (1975) 64 Google Scholar
3 McNally, P. & Lowney, D., Irish Patent Application No. : S2003/0396 & International Patent Application No. PCT/IE2004/000076Google Scholar
4 Sze, S. M., Physics of Semiconductor Devices, John Wiley and Sons, N.Y., 1981 Google Scholar
5 Baumann, J. and Tilgner, R., “Determining photothermally the thickness of a buried layer,” J. Appl. Phys. 58(5), 1982, Sep, 1985 Google Scholar
6 Nzodoum, J. L. Fotsing, Bein, B. K., Pelzl, J., “Potentialities of photothermal displacement experiments in micro-scaled systems,” Superlattices and Microstructures 35 (2004) 419–435.Google Scholar