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Non-contact Electrical Measurements of Sheet Resistance and Leakage Current Density for Ultra-shallow (and other) Junctions

Published online by Cambridge University Press:  17 March 2011

Vladimir N. Faifer ,
Michael I. Current ,
Wojtek Walecki ,
Vitali Souchkov ,
Georgy Mikhaylov ,
Phuc Van ,
Tim Wong ,
Tan Nguyen ,
Jiansong Lu  and
S.H. Lau
...Show all authors
Vladimir N. Faifer
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Michael I. Current
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Wojtek Walecki
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Vitali Souchkov
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Georgy Mikhaylov
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Phuc Van
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Tim Wong
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Tan Nguyen
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Jiansong Lu
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
S.H. Lau
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Ann Koo
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
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Abstract

A novel, non-contact method for determination of ultra-shallow junction sheet resistance and leakage current density has been developed based on monitoring the dynamics of photo-generated carriers by means of spatially separated capacitive probes. At light modulation frequencies of about 100 kHz, spatially resolved surface voltage signals give a direct measure of the junction sheet resistance, independent of the junction depth. At lower light modulation frequencies, the junction leakage current density is determined. Combining capacitive monitoring of modulated photo-generated free carriers with a precision wafer motion stage allows for rapid acquisition of sheet resistance and leakage data for efficient wafer-scale mapping applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C11.9
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. International Technology Roadmap for Semiconductors, ITRS03, Front End Process, Table 71, http://public.itrs.net/Files/2003ITRS/Home2003.htm.Google Scholar
2. Graoui, H., Al-Bayati, A., Tichy, R., Proc. 14th International Conf. on Ion Implantation Technology (IIT02), IEEE 02EX505, 189–192 (2003).Google Scholar
3. Al-Bayati, A., Graoui, H., Speer, J., Ito, H., Matsunaga, Y., Ohuchi, K., Adachi, K., Miyashita, K., Nakayama, T., Oowada, M., Toyoshima, Y., Proc. 14th International Conf. on Ion Implantation Technology (IIT02), IEEE 02EX505, 185–188 (2003).Google Scholar
4. Claryesse, T., Vanhaeren, D., Vandervorst, W., J. Vac. Sci. Technol. B 20(1), 459–466(2002).Google Scholar
5. Vandervorst, W., Clarysse, T., Brijs, B., Loo, R., Peytier, Y., Pawlak, B.J., Budiarto, E., Borden, P., Proc. International Conf. on Characterization of and Metrology for ULSI Technology, 2003, A.I.P. CP683, 758–763 (2003).Google Scholar
6. Patents pending.Google Scholar
7. Faifer, V., Dyukov, V., Pradivtsev, A., Skurida, D., Proc. 24th Research Conf. (ESSDERC'94) I.O.P. 601–604 (1994).Google Scholar