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Non-contact Electrical Measurements of Sheet Resistance and Leakage Current Density for Ultra-shallow (and other) Junctions

Published online by Cambridge University Press:  17 March 2011

Vladimir N. Faifer ,
Michael I. Current ,
Wojtek Walecki ,
Vitali Souchkov ,
Georgy Mikhaylov ,
Phuc Van ,
Tim Wong ,
Tan Nguyen ,
Jiansong Lu  and
S.H. Lau
...Show all authors
Vladimir N. Faifer
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Michael I. Current
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Wojtek Walecki
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Vitali Souchkov
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Georgy Mikhaylov
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Phuc Van
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Tim Wong
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Tan Nguyen
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Jiansong Lu
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
S.H. Lau
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
Ann Koo
Affiliation:
Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA 95112USA, [email protected]
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Abstract

A novel, non-contact method for determination of ultra-shallow junction sheet resistance and leakage current density has been developed based on monitoring the dynamics of photo-generated carriers by means of spatially separated capacitive probes. At light modulation frequencies of about 100 kHz, spatially resolved surface voltage signals give a direct measure of the junction sheet resistance, independent of the junction depth. At lower light modulation frequencies, the junction leakage current density is determined. Combining capacitive monitoring of modulated photo-generated free carriers with a precision wafer motion stage allows for rapid acquisition of sheet resistance and leakage data for efficient wafer-scale mapping applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C11.9
Copyright
Copyright © Materials Research Society 2004

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References

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