Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-20T11:27:16.910Z Has data issue: false hasContentIssue false
  • English
  • Français

Non Destructive Optical Analysis of Implanted Layers in GaAs by Raman Scattering and Spectroscopic Ellipsometry

Published online by Cambridge University Press:  15 February 2011

Joseph Biellmann ,
Bernard Prevot ,
Claude Schwab ,
Jean-Bernard Theeten  and
Marko Erman
Joseph Biellmann
Affiliation:
Laboratoire de Spectroscopie et d'Optique du Corps Solide(L.A. No 232 - CNRS) 5, rue de l'Université, 67000 Strasbourg, FRANCE
Bernard Prevot
Affiliation:
Laboratoire de Spectroscopie et d'Optique du Corps Solide(L.A. No 232 - CNRS) 5, rue de l'Université, 67000 Strasbourg, FRANCE
Claude Schwab
Affiliation:
Laboratoire de Spectroscopie et d'Optique du Corps Solide(L.A. No 232 - CNRS) 5, rue de l'Université, 67000 Strasbourg, FRANCE
Jean-Bernard Theeten
Affiliation:
L.E.P., B.P. 15, 94450 Limeil-Brévannes, FRANCE
Marko Erman
Affiliation:
L.E.P., B.P. 15, 94450 Limeil-Brévannes, FRANCE
Get access

Abstract

Non destructive analysis by Raman Scattering (RS) and Spectroscopic Ellipsometry (SE) is demonstrated on B+- and Se+ shallow implanted GaAs. Qualitative informations are obtained from 1st and 2nd order RS spectra. The former are analysed using the intensity ratio of the T0 and L0 modes, which defines a lattice potential perfection scale. The SE analysis of the E1, E1 +Δ1 structure in the imaginary part of the dielectric function confirms the RS results and its multilayer analysis yields the depth profile of the implanted ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 517
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gibbons, J. F., Johnson, W. S. and Mylroie, S. W., in: Projected Range Statistics, 2nd Ed., (Halstead Press 1975).Google Scholar
2. Theeten, J. B. and Erman, M., J. Vac. Sci. Technol., 20, 471 (1982).Google Scholar
3. Dolling, G. and Waugh, J. T. L., in: Lattice Dynamics, Wallis, R. F. Ed., (Pergamon Press, Oxford 1965) p. 19.CrossRefGoogle Scholar
4. Smith, J. E. Jr., Brodsky, M. H., Crowder, B. L. and Nathan, M. I., in: Proc. 2nd Intern. Conf. Light Scattering in Solids, Paris, France 1971 (Flammarion Paris 1971) p. 330.Google Scholar
5. Biellmann, J., Pr∼vot, B. and Schwab, C., J. Phys. C: Sol. State Phys., in press (1982).Google Scholar
6. Klein, M. V., in: Light Scattering in Solids, Cardona, M. Ed. (Springer, Berlin 1975) p. 158.Google Scholar
7. Erman, M. and Theeten, J. B., Surface and Interface Analysis, 4, 98 (1982).CrossRefGoogle Scholar
8. Erman, M., Thesis, Univ. Paris Orsay (March 1982).Google Scholar