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NMR and ESR Studies on a-Si1-x Gex:H Films Prepared by Glow Discharge and Magnetron Sputtering

Published online by Cambridge University Press:  28 February 2011

T. Shimizu ,
M. Kumeda ,
A. Morimoto ,
Y. Tsujimura  and
I. Kobayashi
T. Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
M. Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
A. Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Y. Tsujimura
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
I. Kobayashi
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
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Abstract

Properties of a-Si1-xGex:H films prepared by magnetron sputtering (MG) and glow discharge decomposition (GD) were compared by means of NMR, ESR, IR and hydrogen-evolution measurements. For MG films, the content of dispersed H is roughly independent of x while the content of clustered H decreases with x. For GD films, both the contents of dispersed and clustered H decrease with x. ESR results reveal that most defects in the films are Ge dangling bonds and that the number of dangling bonds per Ge atom is roughly independent of x for MG films whereas it increases largely with x for GD films. Therefore the content of dispersed H has a good correlation with the number of Ge dangling bonds per Ge atom in a-Si1-xGex:H films. The ratio of the intensity of the IR peak at 2100 cm-1 to that at 2000 cm-1 decreases and increases with x, respectively, for MG and GD films, and the ratio of the intensity of the low temperature H evolution peak to that of the high temperature H evolution peak decreases and increases with x, respectively for MG and GD films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 313
Copyright
Copyright © Materials Research Society 1986

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References

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