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Nitrogen-Atom Bonding at SiO2/Si Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

Y. Ma ,
T. Yasuda  and
G. Lucovsky
Y. Ma
Affiliation:
Department of Physics, Material Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
T. Yasuda
Affiliation:
Department of Physics, Material Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, Material Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

SiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 569
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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