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Nitrogen Plasma Ion Implantation into Carbon Films Deposited by the Anodic Vacuum ARc

Published online by Cambridge University Press:  21 February 2011

Imad F. Husein ,
Fan Li ,
Yuanzhong Zhou ,
Ryne C. Allen  and
Chung Chan
Imad F. Husein
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, USA
Fan Li
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, USA
Yuanzhong Zhou
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, USA
Ryne C. Allen
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, USA
Chung Chan
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, USA
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Abstract

Amorphous carbon films (a-C) deposited by the anodic vacuum arc on Si substrates were implanted with nitrogen using the Plasma Immersion Ion Implantation (PIII) technique to form carbon nitride films (CNX). Scanning Electron Microscopy (SEM) of the a-C films show a surface morphology with maximum grain size in the order of a few nanometers and the exclusion of macroparticles. INcreasing the nitrogen content of the CNX films increased the intensity of the X-ray Photoelecton Spectroscopy (XPS) C Is peak at 286.6 eV and formed a new peak at 285.6 eV which both can be associated with the carbon-nitrogen bond formation. Nanoindentaiton measurements showed that the hardness of the a-C films increased after implanting nitrogen into them. these CNX films exhibited a hardness of 19 GP A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 281
Copyright
Copyright © Materials Research Society 1995

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