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Nitrogen Ion Implantation in Silicon: Structure of the Subsurface Region

Published online by Cambridge University Press:  22 February 2011

Z. Liliental ,
R.W. Carpenter ,
D. Fathya  and
J.C. Kelly
Z. Liliental
Affiliation:
Center for Solid State Science and School of Engineering and Applied Science, Arizona State University, Tempe, AZ 85287
R.W. Carpenter
Affiliation:
Center for Solid State Science and School of Engineering and Applied Science, Arizona State University, Tempe, AZ 85287
D. Fathya
Affiliation:
Center for Solid State Science and School of Engineering and Applied Science, Arizona State University, Tempe, AZ 85287
J.C. Kelly
Affiliation:
Center for Solid State Science and School of Engineering and Applied Science, Arizona State University, Tempe, AZ 85287
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Extract

Subsurface dielectric layers in silicon formed by oxygen ion implantation have been the subject of various investigations, as an attractive alternative to building devices and integrated circuits on insulating substrates. More recently, the methods of high resolution analytical electron microscopy (HRAEM) have been applied to the analysi off these buried dielectric layers with significant results.(1,2 When oxygen is implanted into silicon, the interface between the amorphous oxide and the silicon is sharp on an atomic scale, but islands of silicon exist in the oxide for some distance from the interface. The effect is ion implantation condition dependent. Dielectric layers formed by nitrogen ion implantations are expected to be similar to those formed by oxygen implantationbut offer advantages from the materials science viewpoint in terms of thermodynamic stability and mechanical strength.(3,4In this paper we report observations of the structure of silicon after two different implantations conditions which are the first part of an investigation to determine effect of implantation variables on microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 525
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Carpenter, R. W., Ultramicroscopy 8, 79 (1982).CrossRefGoogle Scholar
2. Fathy, D.,et al, Proc. Third Oxford Conference on Microscopy of Semiconducting Materials 1983 British Institute of Physics Series (in press).Google Scholar
3. Tsujide, T., Nojiri, M. and Kitagawa, H., J. Appl. Phys. 51(3), 1605 (1980).CrossRefGoogle Scholar
4. Dexter, R.J., Watelski, S.B. and Pioroux, S.T., Appl. Phys. Lett. 23, 455 (1973).Google Scholar
5. Carpenter, R. W., Skiff, W. M. and Lin, S., Proc. 41st Mtg. Elec. Mic. Soc. Amer., Phoenix, August 1983, p. 392 Ed. by G. W. Bailey, San Francisco Press (1983).Google Scholar