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Nitrogen Incorporation and Growth Kinetics of GaAsN/GaAs Epilayers Grown by MOVPE

Published online by Cambridge University Press:  10 February 2011

Laurent Auvray ,
Hervé Dumont ,
Jacques Dazord ,
Yves Monteil  and
Jean Bouix
Laurent Auvray
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Hervé Dumont
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Jacques Dazord
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Yves Monteil
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
Jean Bouix
Affiliation:
Laboratoire des Multimatériaux et Interfaces (LMI), UCB-Lyon 1, CNRS-UMTR 5615 43, Bd du 11 Novembre 1918, 69622 Villeurbanne cedex, France
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Abstract

The nitrogen incorporation behavior in GaAs was investigated in the growth temperature range 500-600°C. It was observed that the temperature-dependence of the nitrogen incorporation exhibits two regimes. At 530°C, the nitrogen content x is a nonlinear function of the gas-phase composition indicating a surface-controlled reaction mechanism. The N composition varies slowly with 500°C < T < 560°C with an activation energy of 0.6 eV. For T < 560°C, N decreases exponentially with Ea= 3.7 eV, interpreted in terms of nitrogen desorption. In light of experimental results, we propose a surface kinetic model based on the competitive adsorption of group V precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 189
Copyright
Copyright © Materials Research Society 2000

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