Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T19:50:20.891Z Has data issue: false hasContentIssue false
  • English
  • Français

Nitrogen in Crystalline Si

Published online by Cambridge University Press:  28 February 2011

Herman J. Stein
Herman J. Stein*
Affiliation:
Sandia National Laboratories, PO Box 5800, Albuquerque, New Mexico 87185
Get access

Abstract

Use of N doping, N gas ambients and N implantation in Si processing has stimulated study of the incorporation and behaviour of N in Si. Studies of N-implanted Si and comparisons with melt-doped Si have shown that N pairing is the dominant mode for bonding of N into crystalline Si for a wide range of processing conditions. Studies have also shown that laser annealing quenches a small percentage of implanted N into a substitutional site. Nitrogen diffusion and aggregation have been shown to occur in N-implanted Si upon furnace annealing at temperatures >700°C and there is a simultaneous formation of shallow donors. Interactions between N and other impurities occur in both as-grown and ion-implanted Si. Additional studies are needed to describe more fully the electrical and structural consequences of N-N, Nimpurity and N-defect interactions in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 523
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thompson, F. and Newman, R. C., J. Phys. C:Solid St. Phys. 4, 3249 (1971)CrossRefGoogle Scholar
2. Kachare, F. H., Spitzer, W. G..Kahan, A.,Euler, F.K. and Watley, T. A., J. Appl. Phys. 414, 4393(1973).Google Scholar
3. Ferenczi, G., Pavelka, T. and Scmogyi, M., Physica 116B, 436 (1983).Google Scholar
4. Kaiser, W. and Thurmond, C. D., J. Appl. Phys. 30, 427 (1959).Google Scholar
5. For a discussion of N as a dopant in Si see, Pavolov,E., P. V. Zorin, I., Tetelbaum, D. I. and Khokhlov, A. F., Phys. Stat. Sol. (a) 35, 11 (1976)Google Scholar
6. Josquin, W. J. M. J., Nuclear Instruments and Methods 209/210, 581 (1983)Google Scholar
7. Abe, T., Kikuchi, K., Shirai, S. and Muraoka, S., Electrochem. Soc. Proc. Vol 81–5, edited by Huff, H. R. and Kriegler, R. J., The Electrochemical Society, Inc., Pennington, NJ (1981) p. 54.Google Scholar
8. Hemment, P.L.F., Peart, R. F., Yao, M. F., Stephens, K. G., Chater, R. J., Kilner, J. A., Meekison, D., Booker, G. R. and Arrowsmith, R. P., Appl. Phys. Lett. 46, 952 (1985).CrossRefGoogle Scholar
9. Yatsurugi, Y., Akiyama, N., Endo, Y. and Nozaki, T., J. Electrochem. Soc. 120, 975 (1973).CrossRefGoogle Scholar
10. Stein, H. J., Appl. Phys. Lett. 43, 296 (1983); Proc. 13th International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey, Jr., The Metallurgical Society of AIME, Warrendale, PA (1985) p. 839; J. Electrochem. Soc. 132, 668 (1985); and H. J. Stein, P. S. Peercy and C. R. Hills, Proc. Materials Research Society Vol.35, edited by D. K. Biegelsen, G. A. Rozgonyi and C. V. Shank, Materials Research Society, Pittsburgh, PA (1985) p. 315.CrossRefGoogle Scholar
11. Mikkelsen, J. C., Appl. Phys. Lett. 40, 336 (1982)CrossRefGoogle Scholar
12. Newman, R. C. and Wakefield, J., J. Phys. Chem. Solids 19, 230 (1961).CrossRefGoogle Scholar
13. Wieringen, A. Van and Warmoltz, N., Physics 22, 849 (1956).Google Scholar
14. Johnson, N. M., Biegelsen, D. K. and D.Moyer, M., Appl. Phys. Lett. 40, 882 (1982).Google Scholar
15. Stein, H. J., J. Electron. Matls. 4, 159 (1973).Google Scholar
16. Laser Annealing of Semiconduct ors, edited by Poate, J. M. and Mayer, J. W., Academic Press, New York (1982).Google Scholar
17. Brower, K. L., Phys. Rev. B 26, 6040 (1982).Google Scholar
18. Sprenger, M., Sieverts, E. G., Muller, S. H. and Ammerlaan, C. A. J., Solid State Communications 51, 951 (1984).CrossRefGoogle Scholar
19. Murakami, K., Itoh, H., Takita, K. and Masuda, K., Appl. Phys. Lett. 45, 176 (1984); H. Itoh, K. Murakami, K. Takita and K. Musada, Proc. of Fifteenth Symposium on Ion Implantation and Submicron Fabrication, Rikagaku Kenkyusho, Wako-shi Saitama, 351., Japan (1984) p 85.Google Scholar
20. Tajima, M., Masui, T., Abe, T. and Nozaki, T., Japan J. Appl. Phys. 20, L423 (1981).Google Scholar
21. Sauer, R., Weber, J. and Zulehner, W., Appl. Phys. Lett. 44, 440 (1984).Google Scholar
22. Alt, H. Ch. and Tapfer, L., Appl. Phys. Lett. 45, 426 (19–84); Proceedings of Thirteenth International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey, Jr.,Metallurgical Society of AIME, Warrendale, PA (1985)p. 833.CrossRefGoogle Scholar
23. Zorin, E. I., Pavlov, P. V. and Tetel'baum, D. I., Soviet Phys-Semiconductors 2, 111 (1968); E. I. Zorin, P. V. Pavlov, D. I. Tel'baum and A. F. Khokhlov Soviet Phys-Semiconductors 4, 2026 (1971).Google Scholar
24. Mitchell, J. B., Shewchun, J., Thompson, D. A., and Davies, J. S., J. Appl. Phys. 46, 335 (1975).Google Scholar
25. Itoh, Y., Nozaki, T., Masui, T. and Abe, T., Appl. Phys. Lett. 47, 488 (1985).Google Scholar
26. Mitchell, J. B., Pronko, P. P., Shechun, J., Thompson, D. A. and Davies, J. A., J. Appl. Phys. 46, 332 (1975).Google Scholar
27. Tokumaru, Y., Okushi, H., Masui, T. and Abe, T., Japan J. of Appl. Phys. 21, L443 (1982).Google Scholar
28. Nauka, K., Goorsky, M. S., Gatos, H. C. and Lagowski, J. (Appl. Phys. Lett., to be published).Google Scholar
29. See for example TeKaat, E. H. and Belz, J., Materials Research Society Symposium Vol.45, edited by Appleton, B.R., Eisen, F. H. and Sigmon, T. W., Materials Research Society (1985) p.329; P. L. F. Hemment, Proc. Materials Research Symposium, Strasbourg, France (May 1985); C. I. Drowley and T. I. Kamins, Materials Research Society Proceedings Vol.13, edited by J. Narayan, W. L. Brown and R. A. Lemons, North-Holland, New York (1983) p. 511Google Scholar
30. Newman, R. C., “Infrared Studies of Crystal Defects”, Taylor and Francis Ltd., London, England (1973).Google Scholar
31. Ebsworth, E. A. V., Hall, J. R., Mackillop, M. J., McKean, D. C., Sheppard, N. and Woodward, L. A., Spectrochemica Acta 13, 202 (1958).Google Scholar
32. Luongo, J. P., J. Electrochem. Soc. 130, 1560 (1983).Google Scholar
33. Newman, R. C. and Smith, R. S., Physics. Lett. 29A, 671 (1967).CrossRefGoogle Scholar
34. Feenstra, R. M., private communication.Google Scholar
35. DeLeo, G. G., Milsted, C. S. Jr., and Kralik, J. C., Phys. Rev. B31, 3588 (1985).Google Scholar
36. Stein, H. J., Appl. Phys. Lett. (accepted for publication)Google Scholar
37. DeLeo, G. G., Fowler, W. B. and Watkins, G. D., Phys. Rev. B. 29, 3193 (1984).Google Scholar
38. Messmer, R. P. and Schultz, P. A., Solid State Comm. 52, 563 (1984).Google Scholar
39. Hjalmarson, H. P. and Jennison, D. R., Phys Rev. B 31, 1208 (1985); this symposium.Google Scholar
40. Murakami, K., Itoh, H., Takita, K., Masuda, K. and Nishino, T., Proc. 17th International Conference on Physics of Semiconductors, San Francisco, CA, edited by Chadi, J. D. and Harrison, W. A., Springer, New York (1985) p. 11493.Google Scholar
41. Dornen, A., Pensl, G. and Sauer, R., private communication and this symposium.Google Scholar
42. Chiou, H. D., Moody, J., Sandfort, R. and Shimura, F., Electrochem. Soc. Proceeding Vol 84–7, edited by Bean, K. E. and Rozgonyi, G., The Electrochemical Society Inc., Pennington, NJ (1984) p. 59.Google Scholar
43. Abe, T., This symposium.Google Scholar
44. Stein, H. J., Materials Research Society Proceedings Vol.46, Edited by Johnson, N. M., Bishop, S. G. and Watkins, G. D., Materials Research Society, Pittsburgh, PA (1985) p.287Google Scholar