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Nitrogen Doping of ZnO Prepared by Organometallic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

H-C Pan  and
B. W. Wessels
H-C Pan
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
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Abstract

ZnO layers were grown by organometallic chemical vapor deposition. Films were deliberately doped with nitrogen by incorporating ammonia into the ambient during growth. The resistivity of the films depended strongly on the ammonia partial pressure. The layers were n-type with resistivities in the range of 0.1 − 360 ohm-cm. The films exhibited strong ultraviolet nearbandedge photoluminescent emission. Emission was ascribed to recombination of bound excitons at neutral acceptors, presumably involving substitutional nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 215
Copyright
Copyright © Materials Research Society 1989

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References

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