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Nitrogen Contamination in Simox Wafer

Published online by Cambridge University Press:  28 February 2011

G. E. Davis ,
K. S. Jones  and
S. Prussin
G. E. Davis
Affiliation:
Northrop Electronics Division, Hawthorne, CA 90251
K. S. Jones
Affiliation:
University of Florida, Gainesville, FL 32611
S. Prussin
Affiliation:
TRW Electronics Group, Redondo Beach, CA 90278
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Abstract

Nitrogen was found in as-implanted SIMOX wafers. The redistribution of the nitrogen within the SIMOX structure was studied after the formation anneal for different temperatures (up to 1250 °C), times, ambients (nitrogen plus 1% oxygen and argon), and anneal with and without a capping layer. The nitrogen was found to be concentrated in the buried SiO2 layer and the adjacent damaged silicon regions in the as-implanted oxygen wafers. During the formation anneal, the nitrogen was found to collect(build-up) at the Si/SiO2 buried layer interface. It is postulated that an oxynitride is preferentially formed at the interface where the dangling silicon bonds can capture the soluble nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 111
Copyright
Copyright © Materials Research Society 1988

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References

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