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NITRIDE BASED SCHOTTKY-BARRIER PHOTOVOLTAIC DEVICES

Published online by Cambridge University Press:  01 February 2011

Balakrishnam R Jampana ,
Omkar K Jani ,
Hongbo Yu ,
Ian T Ferguson ,
Brian E McCandless ,
Steven S Hegedus ,
Robert L Opila  and
Christiana B Honsberg
Balakrishnam R Jampana
Affiliation:
[email protected], University of Delaware, Materials Science and Engineering, 139 The Green, 201 Evans Hall,, University of Delaware, Newark, DE, 19716, United States, 302-831-0307
Omkar K Jani
Affiliation:
[email protected], Georgia Institute of Technology, School of Electrical and Computer Engineering, 266 Ferst Dr NW, BH 195, Atlanta, GA, 30332, United States
Hongbo Yu
Affiliation:
[email protected], Georgia Institute of Technology, School of Electrical and Computer Engineering, 266 Ferst Dr NW, BH 195, Atlanta, GA, 30332, United States
Ian T Ferguson
Affiliation:
[email protected], Georgia Institute of Technology, School of Electrical and Computer Engineering, 266 Ferst Dr NW, BH 195, Atlanta, GA, 30332, United States
Brian E McCandless
Affiliation:
[email protected], University of Delaware, Institute of Energy Conversion, 451 Wyoming Road, Newark, DE, 19716, United States
Steven S Hegedus
Affiliation:
[email protected], University of Delaware, Institute of Energy Conversion, 451 Wyoming Road, Newark, DE, 19716, United States
Robert L Opila
Affiliation:
[email protected], University of Delaware, Materials Science and Engineering, 201 Dupont Hall, Newark, DE, 19716, United States
Christiana B Honsberg
Affiliation:
[email protected], University of Delaware, Electrical and Computer Engineering, 201 Evans Hall, Newark, DE, 19716, United States
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Abstract

Schottky-barrier photovoltaic devices are fabricated by selective metal deposition on p-GaN. A 1.25 V open-circuit voltage is observed for the best device. Devices were optimized by annealing in forming gas at temperatures ranging from 550°C to 700°C. Annealing time and forming gas flow rate are used to control the metal-semiconductor Schottky barrier formation. Optimum fabrication parameters are achieved based on photovoltaic response from the devices under UV illumination. Barrier heights (0.47 eV - 0.49 eV) were used as basis to compare the device response. The Schottky-barrier height is very sensitive to processing conditions, for example a 2.5% increase in barrier height is observed when Schottky contact annealing temperature is changed from 600 °C to 650 °C. Under UV illumination, the open-circuit voltage and short-circuit current increase with increasing annealing temperature while the series resistance decreases under such conditions.

Keywords

nitridephotovoltaicsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q09-27
Copyright
Copyright © Materials Research Society 2008

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