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Niobium Nitride Thin Films Deposition using Radical Beam Assisted Deposition

Published online by Cambridge University Press:  21 February 2011

Ivan H. Murzin ,
Nobuyuki Hayashl ,
Isao Sakamoto  and
Matsataka Ohkubo
Ivan H. Murzin
Affiliation:
Metallurgy Department and Institute of Materials Science, The University of Connecticut, Storrs, CT 06268
Nobuyuki Hayashl
Affiliation:
Metallurgy Department and Institute of Materials Science, The University of Connecticut, Storrs, CT 06268
Isao Sakamoto
Affiliation:
Electrotechnical Laboratory, Applied Radiation Physics Section, 1-1-4 Umezono, Tsukuba-shi, Ibaraki, 305 Japan
Matsataka Ohkubo
Affiliation:
Electrotechnical Laboratory, Applied Radiation Physics Section, 1-1-4 Umezono, Tsukuba-shi, Ibaraki, 305 Japan
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Abstract

We have employed a radical beam assisted deposition technique to prepare single-crystalline niobium nitride thin films on MgO (100) substrates. The radical beam containing excited species of nitrogen was produced by an ECR plasma source and used to irradiate the growing Nb film, which was simultaneously deposited by an electron-gun vapor source. The nitride film was found to grow epitaxially on the substrates heated to 600 – 650°C. It has resulted in the formation of NbN having predominantly Bl structure, resistivity of 44 (μΩcm at 20 K, and almost equiatomic composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 9
Copyright
Copyright © Materials Research Society 1995

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References

1 Rando, N., Peacock, A., Foden, C., Dordrecht, A.V., Lumley, J. and Pereira, C., J. Appl. Phys., 73, 5096 (1993).Google Scholar
2 Ugras, N.G., Worsham, A.H., Winker, D. and Prober, D.E., Appl. Phys. Lett., 62, 3519 (1993).Google Scholar
3 Shoji, A., Kiryu, S. and Kohjiro, S., Bull. Electrotechn. Lab., B7, 1061 (1993).Google Scholar
4 Gukaukus, E.J., J. Appl. Phys., 54, 1013 (1983).Google Scholar
5 Missert, , R. Hammond, , J.E. Mooij, , V. Matijasevic, , P. Rosenthal, , TH. Geballe, , A. Kaputnik, , M.R. Beasley, , S.S. Landerman, , CLE. Garwin, and R. Barton, , IEEE Trans. Mag., 25, 2418 (1989).Google Scholar
6 O'Keeffe, P., Komuro, S., Den, S., Morikawa, T. and Aoyagi, Y., Jpn. J. Appl. Phys., 30, 3164 (1991).Google Scholar
7 Yamamoto, K. and Hammond, R.H., in Proc. Int. Symp. on Reactive Plasmas. Nagoya, 1991, p. 253.Google Scholar
8 Kurokado, K., Takahashi, T. and Matsumura, A., Appl. Phys. Lett., 57, 1933 (1990).Google Scholar
9 Gavaler, J.R., Janosko, M.A., Huim, J.K. and Jones, C.K., in Proc. Superconductivity Conf. Stanford, 1969, p. 26.Google Scholar
10 Jones, H., Fisher, O. and Bongi, G., Solid State Commun., 14, 1061 (1974).Google Scholar
11 Thakoor, U.S., Lamb, J.L., Thakoor, A.P. and Khanna, S.K., J. Appl. Phys., 58, 4643 (1985).Google Scholar
12 Lin, L.J. and Prober, D.E., Appl. Phys. Lett., 49, 416 (1986).Google Scholar
13 Kasi, S.K., Kang, H., Sass, C.S. and Rabalais, J.W., Surf. Sci. Rep., 10, 1 (1989).Google Scholar