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Niobate Films for Microwave Applications

Published online by Cambridge University Press:  21 March 2011

C.-R. Cho ,
J.-H. Koh ,
A.M. Grishin ,
S. Abadei  and
S. Gevorgian
C.-R. Cho
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, SWEDEN
J.-H. Koh
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, SWEDEN
A.M. Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, SWEDEN
S. Abadei
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, SWEDEN
S. Gevorgian
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, SWEDEN
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Abstract

Submicron thick niobate films, Na0.5K0.5NbO3 (NKN) and Ag0.9Ta0.42Nb0.58O3-δ (ATN), have been pulsed laser deposited on MgO, Pt80Ir20, and Si substrates for microwave device applications. Strong bi-axial (001)-(011) texture observed in both films on MgO substrates indicates that there are major similarities in the growth mechanisms in these films. The dielectric permittivity ε′ of NKN film increases monotonously with temperature, while that of ATN shows a weak temperature dependence (about 21% of variation) in a wide temperature range from 77 K to 400 K. Measured tunability Δε′/ε′ and dielectric loss tanδ for niobate/MgO interdigital capacitors have been found to be (Δε′/ε′)NKN = 40%, tanδNKN = 1.4-2.3% and (Δε′/ε′)ATN = 4.3%, tanδATN = 0.23-0.25% at 1 MHz under maximum electric field of 100 kV/cm. Microwave spectroscopy studies for NKN/Si varactors show (Δε′/ε′)NKN/Si of 13% and tanδNKN/Si = 1.2-6.6% at 40 GHz @ 200 kV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F7.1
Copyright
Copyright © Materials Research Society 2001

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References

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