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NH3 Doping in MOCVD Growth of ZnO Thin Films

Published online by Cambridge University Press:  01 February 2011

Tahir Zaidi ,
Muhammad Jamil ,
Andrew Melton ,
Nola Li ,
William E. Fenwick  and
Ian T. Ferguson
Tahir Zaidi
Affiliation:
[email protected], Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, Georgia, United States
Muhammad Jamil
Affiliation:
[email protected], United States
Andrew Melton
Affiliation:
[email protected], Georgia Institute of Technologyu, School of Electrical and Computer Engineering, Atlanta, Georgia, United States
Nola Li
Affiliation:
[email protected], United States
William E. Fenwick
Affiliation:
[email protected], United States
Ian T. Ferguson
Affiliation:
[email protected], United States
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Abstract

In this paper effects of NH3 doping on ZnO thin films grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates using diethyl zinc (DEZn) and O2 precursors and N2 as the carrier gas have been studied. NH3 flow rates were varied from 0.1% to 4% in the growth runs. All the runs were done at 500°C at 10 Torr pressure.

The XRD measurements show a single ZnO (002) peak. Raman data for the samples confirms presence of ZnO:N modes at 275cm−1, 510cm−1 and 575 cm−1 and 645cm−1. The PL results for Zn rich films show weak broad peaks centered at 480nm and 650nm with no ZnO band edge emission, while oxygen rich films show weak ZnO band edge emission and a strong broad orange peak centered at 650nm. Hall effect measurements indicate that all of the as-grown films are highly resistive. Some are weakly p-type with carrier concentration of 4.24 × 1014 cm−3 and mobility of 16.55 cm2/Vs. Annealing in N2 ambient for 60 minutes at 800°C enhances the PL band edge emission and converts all the films to highly conducting n-type, with carrier concentration on the order of 8 × 1018 cm−3, mobility on the order of 12 cm2/Vs and resistivity of 0.063 Ω-cm.

Keywords

oxideNII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1109: Symposium B – Transparent Conductors and Semiconductors for Optoelectronics , 2008 , 1109-B06-01
Copyright
Copyright © Materials Research Society 2009

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References

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