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New Techniques for the Nanostructural Characterization of Semiconductor Materials and Devices Using Combined Focused Ion Beam and Transmission Electron Microscopy Techniques

Published online by Cambridge University Press:  10 February 2011

R. Hull  and
D. Dunn
R. Hull
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Thornton Hall, Charlottesville, VA 22903
D. Dunn
Affiliation:
University of Virginia, Department of Materials Science and Engineering, Thornton Hall, Charlottesville, VA 22903
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Abstract

We describe novel techniques which extend the range of available nanostructural characterization capability for semiconductor materials and devices. These techniques combine high spatial resolution imaging and spectroscopy using transmission electron microscopy (TEM) and focused ion beam (FIB) microscopy. Specific capabilities described include nanoscale imaging of dopant distributions, ultra-high resolution secondary ion mass spectroscopy (SIMS) and tomographic image reconstruction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 141
Copyright
Copyright © Materials Research Society 1998

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References

[1] Huang, Y. and Williams, C. C., J. Vac. Sci. Technol. B12 369 (1994)Google Scholar
[2] Vandervorst, W., Privitera, V., Rained, V., Clarysse, T. and Pawlik, M., J. Vac. Sci Technol. B12 276 (1994)Google Scholar
[3] Neogi, S. S., Venables, D., Ma, Z., Maher, D, M, Taylor, M. and Corcoran, S., J. Appl. Phys. 82, 5811 (1997)Google Scholar
[4] Perovic, D. D., Castell, M. R., Howie, A., Iavoie, C., Tiedje, T. and Cole, J. S. W., Ultramicroscopy 58, 104 (1995)Google Scholar
[5] Hall, C. R., Hirsch, P. B. and Booker, G. R., Phil. Mag. 14, 979 (1966)Google Scholar
[6] Hull, R., Stevie, F. A. and Bahnck, D., Appl. Phys. Lett. 66, 341 (1995)Google Scholar
[7] Hull, R., Moore, M., Bahnck, D., Geva, M., Karlicek, R. F., Stevie, F. and Walker, J., Inst. Phys. Ser. Conf. 146, 613 (1995)Google Scholar
[8] Moore, M. V., M.Sc Thesis, University of Virginia (1996)Google Scholar
[9] Perovic, D. D., Weatherly, G. C., Egerton, R. F, Houghton, D. C. and Jackman, T. E, Phil. Mag. A63 757 (1991)10.1080/01418619108213912Google Scholar
[10] Karsten, K. and Erhart, P., Phys. Rev. B 51, 10508 (1995)10.1103/PhysRevB.51.10508Google Scholar
[11] Newman, R. C., “Defects in Ill-V Compounds” in Semiconductors and Semimetals Vol. 38, ed. Weber, E. (Academic Press, Boston, 1993).Google Scholar
[12] Janssens, K. G. F., Vanhellemont, J., Graaf, M. de and Van der Biest, O., Ultramicroscopy 45, 323 (1995)Google Scholar
[13] Janssens, K. G .F., Biest, O. Van der, Vanhellemont, J., Maes, H. E. and Hull, R., Appl. Phys. Lett. 67, 1530 (1995)Google Scholar
[14] Schuhmacher, M., Migeon, H. N. and Rasser, B., in “Secondary Ion Mass Spectroscopy VIII”, ed. Bennighoven, A., Janssen, K.T. F., Tumpner, J. and Werner, H. W., p. 49 Google Scholar