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New Si CVD Precursors: Preparation and Pre-Screening

Published online by Cambridge University Press:  15 February 2011

D. Gaines ,
M. Hop ,
T. Kuech ,
J. Redwing ,
D. Saulys  and
A. Thon
D. Gaines
Affiliation:
University of Wisconsin at Madison, Department of Chemistry, Madison, Wi.
M. Hop
Affiliation:
University of Wisconsin at Madison, Department of Chemistry, Madison, Wi.
T. Kuech
Affiliation:
University of Wisconsin at Madison, Department of Chemical Engineering, Madison, Wi.
J. Redwing
Affiliation:
University of Wisconsin at Madison, Department of Chemical Engineering, Madison, Wi.
D. Saulys
Affiliation:
University of Wisconsin at Madison, Department of Chemistry, Madison, Wi.
A. Thon
Affiliation:
University of Wisconsin at Madison, Department of Chemical Engineering, Madison, Wi.
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Extract

Silanes and their organo-derivatives are of interest as precursors and dopants in chemical vapor deposition (CVD) to prepare (modified) thin films with unique surface properties. Applications of these films are widespread: transitors, laser diodes, optoelectronic devices, etc. Film growth, however, is capital intensive and mechanistically complex, while film characterization is time-consuming and often requires sophisticated instrumentation. A tool is needed to prescreen precursors' CVD behavior, preferrably a technique requiring a minimum of time and sample to provide information directly related to aspects of the film growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 81
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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