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A New, Real-Time Method for Measuring Mobile Charge and Injected Charge in SiO2 on Si

Published online by Cambridge University Press:  15 February 2011

P. Edelman ,
J. Lagowski ,
A. Savchouk ,
A. Hoff ,
L. Jastrzebski  and
E. Persson
P. Edelman
Affiliation:
Semiconductor Diagnostics, Inc, 6604 Harney Road, Suite F, Tampa, FL 33610
J. Lagowski
Affiliation:
CMR, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620
A. Savchouk
Affiliation:
CMR, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620
A. Hoff
Affiliation:
CMR, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620
L. Jastrzebski
Affiliation:
CMR, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620
E. Persson
Affiliation:
Lucent Technologies, Inc., 9333 S. John Young Pkwy, Orlando, FL 32819
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Abstract

We present a new approach to measuring mobile charge in SiO2 without MOS test structures. The measurement is done in non-contact mode and offers a whole-wafer mapping capability of the mobile charge in single minutes. Determination of the mobile charge is based on monitoring the ion drift by measuring corresponding changes in the oxide voltage. The drift is induced on the whole wafer by corona charge deposited on SiO2 followed by 200°C annealing. Surface contamination is distinguished from bulk contamination by selecting the appropriate sequence of the corona-temperature-stress, which injects ions from the surface into the SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 443
Copyright
Copyright © Materials Research Society 1996

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References

[1] Edelman, P.; SPIE, Vol. 2337; 154 (1994).Google Scholar
[2] Edelman, P., et al. ; Proc. of DRIP VI; Colorado, 1995, in press.Google Scholar
[3] Schroder, D.K.; SemiconductorMaterial and Device Characterization; John Wiley & Sons, Inc., New York; 1990; Chapter 6.2.5 and references therein.Google Scholar
[4] Woods, M.H. and Williams, R.; J. Appl. Phys. Lett.; 44, 5506 (1973).Google Scholar
[5] Tada, Y. and Tomizawa, Y.; Jpn. J. Appl. Phys. Lett.; 34; 643 (1995).Google Scholar
[6] Edelman, P., et al. ; MRS Symposium Proceedings; 261, 223 (1992).Google Scholar