Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T18:03:07.310Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Metastable Defect in Silicon, Optical Properties and an Investigation of the Mechanism Causing the Configurational Change

Published online by Cambridge University Press:  25 February 2011

J. H. Svensson  and
B. Monemar
J. H. Svensson
Affiliation:
Department of Physics and Measurement Technology, Institute of Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Institute of Technology, Linköping University, S-581 83 Linköping, Sweden
Get access

Abstract

A new optical transition with a no-phonon energy of 0.615 eV discovered in electron-irradiated silicon grown by the Czochralski technique is investigated, revealing metastable properties of the related defect. The investigation is focused on the optical properties of the transition and its associated structure and on the mechanism governing the change of defect configuration. The transformation of the defect to the metastable state is suggested to be induced by excitonic Auger recombination. A pseudo-donor model is presented as an explanation of the optical spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 265
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yuknevitch, A. V., Fiz. Tverd. Tela (Leningrad) 7, 322 (1965) [Sov. Phys. Solid State 7, 259 (1965)]Google Scholar
2 Tkachev, V. D., V Mudryi, A., Radiation Effects in Semiconductors, ed. by Urli, N. B., Institute of Physics Conference Series, Vol. 31. (IOP, London, 1977), 231 Google Scholar
3 Davies, G., Lightowlers, E. C. , Stavola, M. , Bergman, K., Svensson, B. G. Phys. Rev. B, 35 2755, (1987)Google Scholar
4 Wagner, J., Thonke, K., and Sauer, R., Phys. Rev. B, 31, 5561, (1985)Google Scholar
5 Thonke, K., Hangleiter, A., Wagner, J., Sauer, R., J. Phys. C., 18, L795, (1985)Google Scholar
6 Song, L. W., Zhan, X. D., W Benson, B., Watkins, G. D., Phys. Rev. Lett., 60, 460, (1988)Google Scholar
7 Svensson, J. H., Monemar, B., Phys. Rev B, 40, 1410, (1989)Google Scholar
8 Hangleiter, A., Phys .Rev. B, 37, 2594, (1988)Google Scholar
9 Hangleiter, A., Phys., Rev. B, 35, 9149, (1987)Google Scholar
10 Svensson, J. H., Janzèn, E., Monemar, B., (unpublished)Google Scholar