Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-06T08:09:07.819Z Has data issue: false hasContentIssue false
  • English
  • Français

New Layered Perovskite Vanadium Oxide with Negative Magnetization

Published online by Cambridge University Press:  26 February 2011

Noburu Fukushima ,
Shiro Takeno ,
Shigenori Tanaka  and
Ken Ando
Noburu Fukushima
Affiliation:
Advanced Research Laboratory. Research & Development Center TOSHIBA CORPORATION 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 JAPAN
Shiro Takeno
Affiliation:
Advanced Research Laboratory. Research & Development Center TOSHIBA CORPORATION 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 JAPAN
Shigenori Tanaka
Affiliation:
Advanced Research Laboratory. Research & Development Center TOSHIBA CORPORATION 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 JAPAN
Ken Ando
Affiliation:
Advanced Research Laboratory. Research & Development Center TOSHIBA CORPORATION 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 JAPAN
Get access

Abstract

A new layered perovskite vanadium oxide Sr4V3O8-d was synthesized and its crystal structure and magnetic properties were studied. Sr4V3O8-d has a novel crystal structure, containing a V-0 octahedron and a two-fold V-0 fence in a unit cell. It exhibits negative magnetization below 30 K. when cooled in a magnetic field. This peculiar magnetism is attributed to N-type parasitic ferrimagnetism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 717
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Cyrot, M., Lambert-Andron, B., Soubeyroux, J. L., Rey, M. J., Dehauht, Ph., Cyrot-Lackman, F., Fourcaudot, G., Beille, J. and Tholence, J.L., J. Solid. State Chem. 85, 321 (1990)Google Scholar
2 Nozaki, A., Yoshikawa, H., Wada, T., Yamauchi, H. and Tanaka, S.. Phys. Rev. B43, 181 (1991)Google Scholar
3 Fukushima, N., Tanaka, S., Niu, H. and Ando, K.. Jpn. J. Appl. Phys. 29, L2190 (1990)Google Scholar
4 Niu, H., Fukushima, N., and Ando, K.. Phys. Rev. B44, 4724 (1991)Google Scholar
5 Sugihara, T., Siratori, K., Shindo, I. and Katsura, T., J. Phys. Soc. Jpn. 45, 1191 (1978)Google Scholar
6 Takeno, S., Nakamura, S., Nomaki, T., Fukushima, N. and Ando, K., J. Solid State Chem., 94, 432 (1991)Google Scholar
7 Gorter, E. W., Philips Res. Rep. 9, 403 (1954)Google Scholar
8 Akimitsu, J., Inada, Y., Siratori, K., Shindo, I. and Kimizuka, N. Solid State Commun. 32, 1065 (1979)Google Scholar
9 Miura, N., Oguro, I. and Chikazumi, S.. J. Phys. Soc. Jpn. 45, 1534 (1978)Google Scholar
10 Menyuk, N., Dwight, K. and Wickham, D. G.. Phys. Rev. Lett. 4, 119 (1960)Google Scholar
11 Sakamoto, N. and Tamaguchi, Y.. J. Phys. Soc. Jpn., 17 Suppl. B1. 276 (1962)Google Scholar
12 Shirakawa, N. and Ishikawa, M., Jpn. J. Appl. Phys. 30, L755 (1991)Google Scholar