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New hybrid low-k dielectric materials prepared by vinylsilanepolymerization

Published online by Cambridge University Press:  17 March 2011

Jung-Won Kang
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Byung Ro Kim
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Gwi-Gwon Kang
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Myung-Sun Moon
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Bum-Gyu Choi
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
Min-Jin Ko
Affiliation:
LG Chem. Ltd./Research Park, Corporate R & D, Daejon, Korea
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Abstract

Spin-on Low-K materials are potentially very attractive as interconnectionmaterials in a wide range of semiconductor structures. In this work, neworganic-inorganic hybrid materials synthesized by vinylsilane polymerizationwere proposed. According to compositions and additional fabrications,dielectric constants of these materials were evaluated to be 2.3∼3.1. Thehardness was 2.0GPa after 430°C curing. These materials had good adhesionstrength such that fracture toughness on silicon wafer was 0.22 MPam0.5 without any adhesion promoters. This result indicatesthat these organicinorganic hybrid materials are very promising candidatesfor low-K dielectrics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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