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New Features of Dark and Photoconductivity Response of Low Energy Ar+ Ion bombarded GaAs

Published online by Cambridge University Press:  21 February 2011

A. Vaseashta  and
L. C. Burton
A. Vaseashta
Affiliation:
Bradley Department of Electrical Engineering Virginia Polytechnic Institute and State University Blacksburg, VA 24061
L. C. Burton
Affiliation:
Bradley Department of Electrical Engineering Virginia Polytechnic Institute and State University Blacksburg, VA 24061
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Abstract

Photoconductivity measurements have been made on three SI GaAs sample types: Ar+ ion etched at leV, 3keV, and unetched. Measurements were made versus time, wavelength, and temperature. Photoquenching was done at 1.19 and 2.0eV energy.

Some distinct changes in photoconductive properties are caused by the ion etch: 1) Increase in dark resistance; 2) presence of persistent photoconductivity; 3) increased photosensitivity; 4) increase In quenching rate under 2eV illumination; 5) destruction of the 0.47eV thermally activated photoconductivity.

All samples exhibit Shockley-Read recombination controlled photoconductivity below a temperature of 125K, with the same apparent trap location, at 0.26eV above EF.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 309
Copyright
Copyright © Materials Research Society 1989

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References

1. Pang, S. W. et al., J. Vac. Sci. Technol. B 1 (4), 1334 (1983).Google Scholar
2. Ghandi, S. K. et al., IEEE Elec. Dev. Lett. EDL-3, 48 (1982).Google Scholar
3. Vandenbroucke, D. A. et al., Semiconduct. Sci. Technol. 2, 293 (1987).Google Scholar
4. Kawabe, M. et al., Appi. Optics 17, 2556 (1978).Google Scholar
5. Hara, T. et al., J. Appl. Phys. 62, 4109 (1987).Google Scholar
6. Cole, E. D., Sen, S. and Burton, L. C., J. Elec. Mater. (in press).Google Scholar
7. Fonash, S. J., Ashok, S. and Singh, R., Thin Sol. Films 90, 231 (1982).Google Scholar
8. Peng, C. and Sun, H-H., Semiconduct. Sci. Technol. 2, 779 (1987).Google Scholar
9. Chen, F. Y., Lin, I and Lin, C. H., Semicond. Sci. Technol. 2, 533 (1987).Google Scholar
10. Desnica, U. V. and Santic, B., Appl. Phys. Lett. 54, 810 (1989).Google Scholar
11. Lin, A. L. and Bube, R. H., J. Appl. Phys. 47, 1859 (1976).Google Scholar
12. Mita, Y., Appl, J., Phys. 61, 5325 (1987).Google Scholar
13. Jimenez, J. et al., Sol. St. Commun. 55, 459 (1985).Google Scholar
14. Vaseashta, A., Johnson, P. and Burton, L. C., Measurement and Control (in press).Google Scholar
15. Dischler, B. and Kaufmann, V., Revue Phys. Appl. 23, 779 (1988).Google Scholar
16. Lin, A. L., Omelianovski, E. and Bube, R. H., J. Appl. Phys. 47, 1852 (1976).Google Scholar