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A New Computationally-Efficient Two-Dimensional Model for Boron Implantation Into Single-Crystal Silicon

Published online by Cambridge University Press:  28 February 2011

K. M. Klein ,
C. Park ,
S. Yang ,
S. Morris ,
V. Do  and
A. F. Tasch
K. M. Klein
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
C. Park
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
S. Yang
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
S. Morris
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
V. Do
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
A. F. Tasch
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
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Abstract

We have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This new model is based on the dual Pearson semi-empirical implant depth profile model [1] and the UT-MARLOWE Monte Carlo boron ion implantation model [2]. This new model can predict with very high computatational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 217
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] . Tasch, A. F., Shin, H., Park, C., Alvis, J., and Novak, S., J. Electrochem. Soc., 136, 810 (1989).Google Scholar
[2] . Klein, K. M., Park, C., and Tasch, A. F., IEEE IEDM Tech. Dig., 30–5, 745 (1990).Google Scholar
[3] . Klein, K. M., Park, C., Tasch, A. F., Simonton, R. B., and Novak, S., J. Electrochem. Soc., 138, 2102 (1991).Google Scholar
[4] . Law, M. and Dutton, R. W., IEEE Trans. CAD, 7 181 (1988).Google Scholar