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Negative Differential Resistance Characteristics of Silicon Nanocrystal Memory

Published online by Cambridge University Press:  17 March 2011

Seung Jae Baik  and
Koeng Su Lim
Seung Jae Baik
Affiliation:
also with Samsung Electronics co.
Koeng Su Lim
Affiliation:
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1, Kusong-dong, Yusong-gu, Taejon 305-701, Korea
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Abstract

Two-dimensional (2D) Si quantum dot array was fabricated by oxidation of microcrystalline Si film deposited by photo chemical vapor deposition (photo-CVD). Average size of Si quantum dot was estimated to be 2.4nm and dot density 7 ∼ 8 ×1011 cm−2. Nanocrystal memory device with this 2D quantum dot array demonstrated negative differential resistance characteristics and single charge tunneling phenomena, which was observed as stepwise decrease of gate transconductance. Interface states at the oxidized surface of quantum dots were assumed to explain temperature dependence characteristics. This new process is adequate for functional device application of nanocrystal metal-oxide-semiconductor (MOS) memory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A14.5
Copyright
Copyright © Materials Research Society 2000

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References

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