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Near-Room Temperature Deposition of W and WO3 Thin Films by Hydrogen Atom Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Wei William Lee  and
Robert R. Reeves
Wei William Lee
Affiliation:
IBM Research Division, Almaden Research Center, San Jose, CA 95120-6099
Robert R. Reeves
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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Abstract

A novel near-room temperature CVD process has been developed using H-atoms reaction with WF6 to produce tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal W03 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 137
Copyright
Copyright © Materials Research Society 1992

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References

1. Blewer, R., Ed. Tungsten and Other Refractory Metals for VLSI Applications I. (Mat. Res. Soc.; Pittsburgh, PA 1986).Google Scholar
2. Broadbent, E., Ed. Tungsten and Other Refractory Metals for VLSI Applications II, (Mat. Res. Soc.; Pittsburgh, PA 1987).Google Scholar
3. Wells, V., Ed. Tungsten and Other Refractory Metals for VLSI Applications III. (Mat. Res. Soc.; Pittsburgh, PA 1988).Google Scholar
4. Blewer, R. and McConica, C., Ed. Tungsten and Other Refractory Metals for VLSI Applications V, (Mat. Res. Soc.; Pittsburgh, PA 1989).Google Scholar
5. Wong, S. and Furukawa, S., Ed. Tungsten and Other Refractory Metals for VLSIJULSI Applications V. (Mat. Res. Soc.; Pittsburgh, PA 1990).Google Scholar
6. Lee, W. and Reeves, R., J. Vac. Sci. Tech. A9(3), 653, (1991).Google Scholar
7. Weast, R., Ed. CRC Handbook of Chemistry and Physics, 64th ed. (CRC Press, Boca Raton, FL (1985), F180.Google Scholar
8. Dean, J., Ed. Lange's Handbook of Chemistry, 6th ed. (John Wiley & Sons, New York, 1983), P.86.Google Scholar
9. Stull, D. and Prophet, H., Eds. JANAF Thermochemical Tables 2nd ed. (NBS, U.S.CPO. Washington D. C. 1971).Google Scholar